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  -18a Datasheet PDF File

For -18a Found Datasheets File :: 2584    Search Time::1.5ms    
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    AP9965GEJ AP9965GEH

Advanced Power Electronics Corp.
Part No. AP9965GEJ AP9965GEH
OCR Text ...on-resistance 2 v gs =10v, i d =18a - - 28 m ? ? 21 - s i dss drain-source leakage current v ds =40v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =32v, v gs =0v -...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
27 A, 40 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

File Size 131.49K  /  4 Page

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    AP4429GM-HF

Advanced Power Electronics Corp.
Part No. AP4429GM-HF
OCR Text ...st switching characteristic i d 18a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal...
Description Ultra_Low On-resistance, Simple Drive Requirement

File Size 90.51K  /  4 Page

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    AP40P03GP AP40P03GP14

Advanced Power Electronics Corp.
Part No. AP40P03GP AP40P03GP14
OCR Text ...-resistance 2 v gs =-10v, i d =-18a - - 28 m v gs =-4.5v, i d =-10a - - 50 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-18a - 20 - s i dss drain-source leakage curr...
Description Lower Gate Charge Simple Drive Requirement

File Size 114.25K  /  5 Page

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    AP40P03GI-HF AP40P03GI-HF14

Advanced Power Electronics Corp.
Part No. AP40P03GI-HF AP40P03GI-HF14
OCR Text ...-resistance 2 v gs =-10v, i d =-18a - - 28 m ? v gs =-4.5v, i d =-10a - - 50 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-18a - 21 - s i dss drain-source leakage curr...
Description Lower On-resistance, Simple Drive Requirement

File Size 92.83K  /  4 Page

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    AP40N03GP

Advanced Power Electronics Corp.
Part No. AP40N03GP
OCR Text ...( o c) normalized r ds(on) i d =18a v g =10v 8 12 16 20 24 28 32 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =18a t c =25 1 10 100 0.2 0.4 0.6 0.8 1 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c ...
Description Low Gate Charge Simple Drive Requirement

File Size 92.12K  /  4 Page

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    AP40N03GJ-HF AP40N03GH-HF

Advanced Power Electronics Corp.
Part No. AP40N03GJ-HF AP40N03GH-HF
OCR Text ...on-resistance 2 v gs =10v, i d =18a - 18 21 m ? v gs =4.5v, i d =14a - 24 30 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =18a - 26 - s i dss drain-source leakage current v...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fast Switching Characteristic RoHS Compliant & Halogen-Free

File Size 94.14K  /  4 Page

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    2SK2728

HITACHI[Hitachi Semiconductor]
Part No. 2SK2728
OCR Text ...nc nc nc ns ns ns ns V ns I D = 18A, VGS = 0 I F = 18A, VGS = 0 diF/ dt = 100A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 25V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1mA, VDS = 10V*1 I D = 9A, VGS = 10V*1 I D = 9A, VDS = 10...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 49.94K  /  10 Page

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    IRF640L IRF640S

IRF[International Rectifier]
Part No. IRF640L IRF640S
OCR Text ...V RDS(on) = 0.18 G S ID = 18A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and costeffectiveness....
Description Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
HEXFET? Power MOSFET

File Size 224.71K  /  10 Page

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    AP30P10GS-HF14 AP30P10GS-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP30P10GS-HF14 AP30P10GS-HF-14
OCR Text ...a q g total gate charge 2 i d =-18a - 50 80 nc q gs gate-source charge v ds =-80v - 7.5 - nc q gd gate-drain ("miller") charge v gs =-10v - 16.5 - nc t d(on) turn-on delay time 2 v ds =-50v - 12 - ns t r rise time i d =-18a - 33 - ns t d(of...
Description Simple Drive Requirement

File Size 91.51K  /  4 Page

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