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				IRF[International Rectifier]
Part No.	IRF3205L IRF3205S IRF3205
OCR Text	... Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 138H RG = 25, IAS = 62A. (See Figure 12) Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum a...
Description	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
File Size	144.83K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205 IRF3205PBF
OCR Text	... Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 138H RG = 25, IAS = 62A. (See Figure 12) Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum a...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
File Size	91.40K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP
Part No.	FDPF13N50FT FDP13N50F
OCR Text	...econds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambi...
Description	500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail N-Channel MOSFET 500V, 12A, 0.54ヘ N-Channel MOSFET 500V, 12A, 0.54Ω
File Size	574.45K / 9 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOT462
OCR Text	... Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained usin...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	64.88K / 5 Page	View it Online	Download Datasheet

				http:// Alpha & Omega Semiconductors
Part No.	AO4614B AO4614BL AO4614L
OCR Text	... Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. 9 D. The static characteristics in Figures 1 to 6 are obtained using <300 s puls...
Description	Complementary Enhancement Mode Field Effect Transistor
File Size	218.74K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3205ZLPBF IRF3205ZPBF IRF3205ZSPBF
OCR Text	...ain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM Units PD @TC = 25C Power Dissipation VGS EAS ...
Description	AUTOMOTIVE MOSFET
File Size	361.11K / 13 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	2SK1697-15
OCR Text	...the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is pro...
Description	Silicon N-Channel MOS FET
File Size	91.22K / 9 Page	View it Online	Download Datasheet

				Suntan Capacitors
Part No.	ZM4740
OCR Text	... suntan ? technology company limited website: www.suntan.com.hk email: info@suntan.com.hk tel: (852) 8202 8782 fax: (852) 8208 6246 suntan silicon planar power zener diodes zm4728...zm4761 characteristics at t...
Description	For use in stabilizing and clipping circuits with high power rating
File Size	431.03K / 4 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3703 IRF3703PBF
OCR Text	...t (A) OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 175 C I D , Drain Current (A) 100 1000 10us 10 TJ = 25 C 1 100us 100 1ms 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 2.4 10 TC = 25 ...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFR3706PBF IRFU3706PBF IRFR3706TRPBF
OCR Text	...t (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10us TJ = 175 C 10 I D , Drain Current (A) 100 100 100us 1ms 10 10ms TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 1 1 TC = 25 C TJ = 175 C Single Puls...
Description	SMPS MOSFET
File Size	218.92K / 11 Page	View it Online	Download Datasheet

For -limited Found Datasheets File :: 121978 Search Time::2.75ms
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