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For -th Found Datasheets File :: 95402 Search Time::1.469ms
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				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	...ain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Rever...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	...DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Thresho...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...ain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Rever...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Vo...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				RFMD
Part No.	RFFM4201
OCR Text	...- logic high 1 10 ? a thermal r th_i 30 c/w esd human body model 250 v eia/jesd22-114a rf pins 500 v eia/jesd22-114a dc pins charge device model 500 v jesd22-c101c all pins truth table status pdown vtx vrx tx mode 1 1 0 rx mode 0 0 1...
Description	2.4GHz TO 2.5GHz HIGH POWER FRONT END MODULE
File Size	1,487.65K / 14 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	IPP045N10N3G IPI045N10N3G IPB042N10N3G
OCR Text	...(BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=150 A V DS=100 V, V GS=0 V, T j=25 C V DS=100 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100...
Description	OptiMOS?? Power-Transistor OptiMOS? Power-Transistor
File Size	343.54K / 11 Page	View it Online	Download Datasheet

				NICHIA CORPORATION
Part No.	NSSW204CT
OCR Text	... * i fp co ndit io n s wi th pu ls e wi dth 1 0 m s an d dut y cycl e 10%. ( 2 ) in it ial e l ect r ical/ o pt i cal c h ar acterist ics ite m symbol condition typ max unit forward voltage v f i f =20ma 3.0 - v...
Description	WHITE LED
File Size	404.11K / 17 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...ain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Rever...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPP041N12N3G IPI041N12N3G
OCR Text	...(BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=270 A V DS=100 V, V GS=0 V, T j=25 C V DS=100 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100...
Description	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
File Size	501.50K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPP041N04NG IPB041N04NG
OCR Text	...(BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=45 A V DS=40 V, V GS=0 V, T j=25 C V DS=40 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance5) Gate resistance Transconductance 2) 3) 4) - -...
Description	OptiMOS鈩? Power-Transistor
File Size	278.72K / 10 Page	View it Online	Download Datasheet

For -th Found Datasheets File :: 95402 Search Time::1.469ms
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