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				Mitsubishi Electric Corporation
Part No.	CM75DU-12H
OCR Text	...measured point r s t tab#110 t=0.5 dimensions inches millimeters a 3.7 94.0 b 3.15 0.01 80.0 0.25 c 1.89 48.0 d 0.94 24.0 e 0.28 7.0 f 0....150a/ m sCC160ns diode reverse recovery charge** q rr i e = 75a, di e /dt = -150a/ m s C 0.18 C m c...
Description	IGBT Modules: 600V
File Size	54.55K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT75GP120JDF3
OCR Text	... typ max 1200 3 4.5 6 3.3 3.9 3.0 1250 5500 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 1...150a i c = 150a i c = 37.5a i c = 75a 050-7423 rev b 8-2004 apt75gp120jdf3 t j = 1...
Description	MOSFET
File Size	203.84K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	FS75R12W2T4
OCR Text	...g gatecharge v??=15v...+15v q? 0,57 c internergatewiderstand internalgateresistor ty?=25c r? 10 a eingangskapazit?t inputcapacitance f=1mhz,ty?=25c,v??=25v,v??=0v ct 4, 30 nf rckwirkungskapazit?t reversetransfercapacitance f=1mhz,ty?=2...
Description	EasyPACK module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC
File Size	491.40K / 9 Page	View it Online	Download Datasheet

				Infineon
Part No.	SIGC223T120R2CS
OCR Text	...500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nit rogen, < 6...150a 2.7 3.2 3.7 gate - emitter threshold volta ge v ge(th) i c =6ma , v ge =v ce 4.5 ...
Description	IGBTs - HV Chips - SIGC223T120R2CS, 1200V, 150A
File Size	65.06K / 4 Page	View it Online	Download Datasheet

				Infineon
Part No.	SIGC223T120R2CL
OCR Text	...500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 ...150a 1.8 2.2 2.6 gate - emitter threshold voltage v ge(th) i c =6ma , v ge =v ce 4.5 ...
Description	IGBTs - HV Chips - SIGC223T120R2CL, 1200V, 150A
File Size	65.08K / 4 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	2MBI150VB-120-50
OCR Text	...v ge = 0v, v ce = 1200v - - 2.0 ma gate-emitter leakage current i ges v ce = 0v, v ge = 20v - - 400 na gate-emitter threshold voltage v...150a t j =25c - 2.00 2.45 v t j =125c - 2.35 - t j =150c 2.40 v ce (sat) (chip) v ge = 15v i c = 1...
Description	IGBT MODULE (V series) 1200V / 150A / 2 in one package
File Size	287.83K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT2X100DQ120J
OCR Text	...pf min typ max 2.4 3.0 2.65 1.8 100 500 110 characteristic / test conditions forward voltage maximu...150a i f = 100a, t j = 125c v r = 1200v v r = 1200v, t j = 125c dual die isotop ? package m...
Description	(APT2x100DQ120J / APT2x101DQ120J) ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
File Size	170.03K / 4 Page	View it Online	Download Datasheet

				Analog Devices, Inc.
Part No.	DBFF150R12KS430
OCR Text	...v ce = 25v, v ge = 0v c res - 0,5 - nf kollektor-emitter reststrom collector-emitter cut-off current gate-emitter reststrom ...150a, v ce = 600v turn on delay time (inductive load) v ge = 15v, r g = 6,8 ? , t vj = 25c t ...
Description	IGBT Module IGBT模块
File Size	143.52K / 8 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	PP150T060
OCR Text	... 96 Min 20 14.4 12 Typ 24 15 15 0 225 98 460 See Figure Below See Figure Below See Figure Below 100 2 Max 30 18 Units Volts Volts Volts Volt...150A / 600V TM 3 phase IGBT Assembly Gate Drive Board Interface Signal Definitions Pin 1 2 3...
Description	POW-R-PAK 150A / 600V 3 phase IGBT Assembly
File Size	358.80K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSM150GAL120DLC
OCR Text	...v ce = 25v, v ge = 0v c res - 0,7 - nf kollektor-emitter reststrom v ce = 1200v, v ge = 0v, t vj = 25c i ces - 7 184 m a collector-emi...150a, v ce = 600v turn on delay time (inductive load) v ge = 15v, r g = 5,6 w , t vj = 25c t ...
Description	IGBT Module IGBT模块
File Size	84.79K / 8 Page	View it Online	Download Datasheet

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