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ST Microelectronics
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| Part No. |
STB4NC80Z-1 STB4NC80ZT4 STP4NC80Z STP4NC80ZFP
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| OCR Text |
... ds drain-source voltage (v gs =0) 800 v v dgr drain-gate voltage (r gs =20k w ) 800 v v gs gate- source voltage 25 v i d drain current (co...345v r ds(on) static drain-source on resistance v gs =10v,i d =2a 2.4 2.8 w symbol parameter test co... |
| Description |
N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET
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| File Size |
531.90K /
13 Page |
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ST Microelectronics
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| Part No. |
STP4NB100 STP4NB100FP
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| OCR Text |
...s drain-source voltage (v gs = 0) 1000 v v dgr drain- gate voltage (r gs = 20 k w ) 1000 v v gs gate-source voltage 30 v i d drain curre...345v r ds(on) static drain-source on resistance v gs = 10 v i d = 2 a 4 4.4 w i d(on) on state d... |
| Description |
N-CHANNEL 1000V - 4 OHM - 3.8A - TO-220/TO-220FP POWERMESH MOSFET
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| File Size |
302.03K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP7NB60FP
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| OCR Text |
0 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description ...345v r ds(on) static drain-source on resistance v gs = 10v i d = 3.6 a 1.0 1.2 w i d(on) on stat... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
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| File Size |
353.45K /
9 Page |
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ST Microelectronics
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| Part No. |
STW11NB80
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| OCR Text |
0.65 w - 11a - t0-247 powermesh ? mosfet n typical r ds(on) = 0.65 w n extremely high dv/dt capability n 30v gate to source voltage...345v r ds(on) static drain-source on resistance v gs = 10 v i d = 5.5 a 0.65 0.8 w w i d(on) on ... |
| Description |
N-CHANNEL 800V - 0.65 OHM - 11A - TO-247 POWERMESH MOSFET
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| File Size |
257.71K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW13NB60
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| OCR Text |
0.48 w - 13a - to-247/isowatt218 powermesh ? mosfet n typical r ds(on) = 0.48 w n extremely high dv/dt capability n 100% avalanche test...345v r ds(on) static drain-source on resistance v gs = 10v i d = 6.5 a 0.48 0.54 w i d(on) on st... |
| Description |
N-CHANNEL 600V - 0.48 OHM - 13A - TO-247/ISOWATT218 POWERMESH MOSFET
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| File Size |
320.17K /
9 Page |
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ST Microelectronics
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| Part No. |
STB7NB60-1 STB7NB60T4
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| OCR Text |
0 omh - 7.2a - i 2 pak/d 2 pak powermesh ? mosfet n typical r ds(on) = 1.0 w n extremely high dv/dt capability n 100% avalanche tested ...345v r ds(on) static drain-source on resistance v gs = 10v i d = 3.6 a 1.0 1.2 w i d(on) on stat... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
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| File Size |
278.54K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB11NB40
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| OCR Text |
0.48 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using...345v r ds(on) static drain-source on resistance v gs =10v i d = 5.3 a 0.48 0.55 w i d(o n) on state ... |
| Description |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
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| File Size |
246.96K /
9 Page |
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ST Microelectronics
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| Part No. |
STGW40NC60V
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| OCR Text |
...ollector-emitter voltage (v gs =0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continu...345v v ce(sat) collector-emitter saturation voltage v ge =15v,i c =40a,tj=25c 1.92 2.5 v v ge =15 v,... |
| Description |
N-CHANNEL 40A - 600V TO-247 POWERMESH IGBT
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| File Size |
113.72K /
6 Page |
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it Online |
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