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1-8ghz Datasheet PDF File

For 1-8ghz Found Datasheets File :: 991 Search Time::2.094ms
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				Sony
Part No.	CXG1045N
OCR Text	...dB (Typ.) @900MHz 0.7dB (Typ.) @1.8GHz * High power switching P1dB: 38dBm (Typ.) @900MHz 37dBm (Typ.) @1.8GHz * Small package SSOP-8pin: (3 x 6.4 x 1.25mm) * Low current: 200A (Typ.) Application * GSM900 or GSM1800 handsets * GSM900/GSM1800...
Description	High Power DPDT Switch for GSM From old datasheet system
File Size	60.34K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FA01219A
OCR Text	...and small size handheld radio. 1 Unit:mm GND 8 FEATURES * Low voltage * High gain * High efficiency * High power 3.5V 22.5B 50% 30.5dBm 2 7 3 6 4 5 APPLICATION PDC0.8GHz GND 10.0 0.8 2.0 6.0 1 RF INPUT ...
Description	GaAs FET HYBRID IC From old datasheet system
File Size	22.92K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLC057WG
OCR Text	...eliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate curr...8GHz IDS 0.6 IDSS Output Power (dBm) P1dB (dBm) 28 IDS 0.6 IDSS 26 Pout 24 22 20 18 16 ...
Description	C-Band Power GaAs FET
File Size	86.42K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLC157XP
OCR Text	...eliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate curr...8GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 400mA VDS = 5V, IDS = 30mA IGS = -30A Min. 1...
Description	GaAs FET & HEMT Chips
File Size	55.15K / 4 Page	View it Online	Download Datasheet

				Fujitsu, Ltd. FUJITSU[Fujitsu Media Devices Limited] Fujitsu Component Limited.
Part No.	FRM5W232BS
OCR Text	...The device operates in both the 1,310 and 1,550nm wavelength windows. The nominal 10K integral thermistor allows accurate monitoring of the ...8GHz 2.5Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10, Rext=-13dB, VR is set at optimum value Ta=25C Ta=-40 to...
Description	Incorporates a 30 micron InGaAs Avalanche Photodiode 采用0微米铟镓砷雪崩光电二极管
File Size	111.13K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1377 BFP180
OCR Text	...ration BFP 180 RDs Q62702-F1377 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter ...8GHz VCE = Parameter 16 8V dB 3V G 16 G 12 5V 10 14 2V 8 12 6 10 1V 4 8 0.7V 3V ...
Description	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) From old datasheet system
File Size	76.23K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TB31356AFL
OCR Text	1.8GHz,600MHz DUAL-PLL FREQUENCY SYNTHESIZER The TB31356AFL is a PLL synthesizer used for application of the digital mobile communication and similar other applications. The device features two independently-controllable, built-in PLLs. FE...
Description	1.8GHz,600MHz DUAL-PLL FREQUENCY SYNTHESIZER
File Size	294.71K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... ETC INFINEON[Infineon Technologies AG]
Part No.	CFH800
OCR Text	...0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz) Low cost miniature package SOT343 LG = 0.4m; W G = 800m Tape and Reel packaging Electrostatic discharge sensitive device, observe handling precautions! Pin assignment: 1 = gate 2 = source 3 = drain 4...
Description	Typical Common Source S - Parameters
File Size	71.94K / 7 Page	View it Online	Download Datasheet

				United Monolithic Semic... UMS[United Monolithic Semiconductors]
Part No.	CHA7010-99 CHA7010-99F_00 CHA7010 CHA7010-99F/00
OCR Text	...ed n Chip size: 4.74 x 4.36 x 0.1 mm Vctr Vc Input Matching Network Inter-stage Output Combiner Vctr Vc Vctr Vc ...8GHz) Saturated output power (9.8 to 10.4GHz) Saturated output power variation versus temperature Ou...
Description	X-band GaInP HBT High Power Amplifier
File Size	156.54K / 7 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1490 BFR180W
OCR Text	...ation BFR 180W RDs Q62702-F1490 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter volt...8GHz VCE = Parameter 15 dB 13 10V 5V 3V 2V G 15 14 G 12 11 10 13 12 11 10 9 8 1V ...
Description	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) From old datasheet system
File Size	56.55K / 7 Page	View it Online	Download Datasheet

For 1-8ghz Found Datasheets File :: 991 Search Time::2.094ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |