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  1030.0 Datasheet PDF File

For 1030.0 Found Datasheets File :: 1818    Search Time::3.047ms    
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    BLA6H0912-500

NXP Semiconductors
Part No. BLA6H0912-500
OCR Text ...lowing conditions: f = 960 MHz, 1030 MHz, 1090 MHz or 1215 MHz. VDS = 50 V; IDq = 100 mA; PL = 450 W; tp = 128 s; = 10 %. BLA6H0912-500_...0.79 - j1.17 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance BLA6H...
Description LDMOS avionics radar power transistor

File Size 119.92K  /  14 Page

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    MRF6V12250HSR3 MRF6V12250HR3

Freescale Semiconductor, Inc
Part No. MRF6V12250HSR3 MRF6V12250HR3
OCR Text ...tts Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 sec, Duty Cycle = 10% Power Gain -- 20.3 dB Drain Efficiency -- 65.5% * Capable ...0.5, +100 --6.0, +10 -- 65 to +150 150 225 Unit Vdc Vdc C C C Table 2. Thermal Characteristics C...
Description RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

File Size 1,271.51K  /  13 Page

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    BLA1011-200R BLA1011S-200R

NXP Semiconductors
Part No. BLA1011-200R BLA1011S-200R
OCR Text ...pplications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance RF performance at Th = 25 C in a common source class-AB ...0.15 Unit K/W transient thermal impedance from junction to Th = 25 C heatsink Thermal resis...
Description Avionics LDMOS transistors

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    T1020-600W T1030-600W

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. T1020-600W T1030-600W
OCR Text ... DESCRIPTION The T1020-600W and 1030-600W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISO...0 Unit C/W C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 100 mW PGM = 2 W (tp = 20 s) ELECTR...
Description SNUBBERLESS TRIAC
SNUBBERLESS TRIAC

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    VISAY[Vishay Siliconix]
Part No. TEMD1020 TEMD1040 TEMD1030 TEMD1000
OCR Text 1030/1040 Vishay Semiconductors Silicon PIN Photodiode Description TEMD1000 series are high speed silicon PIN photodiodes molded in SM...0.25 mm2 * Daylight filter * Versatile terminal configurations * Package matched to IR Emitter serie...
Description Silicon PIN Photodiode

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    MAGX-001090-600L00 MAGX-001090-SB0PPR

M/A-COM Technology Solutions, Inc.
Part No. MAGX-001090-600L00 MAGX-001090-SB0PPR
OCR Text 1030 to 1090 mhz, 32 s pulse, 2% duty rev. v1 magx - 001090 - 600l00 1 1 1 m/a - com technology solutions inc. (macom) and ...0.24 649 s p 1090 4.50 21.3 18.6 64.4 - 11.0 0.23 661 s p parameter te...
Description GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration

File Size 938.29K  /  7 Page

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    Microsemi, Corp.
Part No. TCS1200
OCR Text ...s, 53 volts pulsed avionics at 1030 mhz general description the tcs1200 is a high power common base bipolar transistor. it is desig...0.5 db vswr load mismatch tolerance 1 f = 1030 mhz, v cc = 53 volts pin = 115 watts 2.5:1 ...
Description 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz L BAND, Si, NPN, RF POWER TRANSISTOR

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    Philips
Part No. BLA1011-10
OCR Text ...transmitter applications in the 1030 to 1090 MHz frequency range. DESCRIPTION 2 1 BLA1011-10 PINNING - SOT467C PIN 1 2 3 drain gate sou...0.6 Nm fastening torque. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth...
Description Avionics LDMOS transistor

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    Philips
Part No. BLA1011-200
OCR Text ...transmitter applications in the 1030 to 1090 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor en...0; ID = 3 mA VDS = 10 V; ID = 300 mA VGS = 0; VDS = 36 V VGS = VGSth + 9 V; VDS = 10 V VGS = 20 V; V...
Description Avionics LDMOS transistor

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    Philips
Part No. BLA1011-2
OCR Text ... * Avionics applications in the 1030 to 1090 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor en...0.4 mm thermal vias with 20 m tin plating and thermal compound between PCB and heatsink. CHARACTERIS...
Description Avionics LDMOS transistor

File Size 66.35K  /  8 Page

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