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  12.2-12.8ghz Datasheet PDF File

For 12.2-12.8ghz Found Datasheets File :: 802    Search Time::2.687ms    
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    SIEMENS AG
Part No. BFP182R
OCR Text 12-1999 1 npn silicon rf transistor for low noise, high-gain broadband amplifiers at collector currents from 1 ma to 20 ma f t = 8 ghz f = 1.2 db at 900 mhz esd : e lectro s tatic d ischarge sensitive device, observe handli...
Description NPN Silicon RF Transistor(NPN 射频硅晶体管)

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    SIRENZA[SIRENZA MICRODEVICES]
Part No. SBW-5089
OCR Text ...7.5 23 3.6 19.1 34.0 19.4 19 12 23 3.9 18.7 33.0 19.4 15 11 23 3.9 17.3 30.5 17.5 12 10.5 23 4.1 15.1 25.5 13.4 12.5 10.9 23 4.3...2 3 Frequency(GHz) 4 5 6 Operati on of thi s devi ce beyond any one of these li mi ts...
Description DC-8 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier

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    BFP181

INFINEON[Infineon Technologies AG]
Part No. BFP181
OCR Text 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP181 Maximum Ratings Parameter Marking RFs 1=C Pin Configuration 2=E 3=B 4=E Pa...
Description NPN Silicon RF Transistor

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183R Q62702-F1594
OCR Text ...power dissipation Symbol Values 12 20 20 2 65 5 mW 250 150 - 65 ... + 150 - 65 ... + 150 295 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 76 C Junction temperature Ambient temperature Storage temperature Thermal Res...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA)
From old datasheet system

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP183W Q62702-F1503
OCR Text ...power dissipation Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 ... + 150 - 65 ... + 150 205 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 58 C Junction temperature Ambient temperature Storage temperature Thermal Res...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

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    BFS483 Q62702-F1574 Q62702F1574

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFS483 Q62702-F1574 Q62702F1574
OCR Text ...power dissipation Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 ... + 150 - 65 ... + 150 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg TS 40 C Junction temperature Ambient temperature Storage temperature Thermal Resistance J...
Description NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管(对于低噪声,高增益的colector2mA至二十八毫安目前的宽带放大器
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
TRANSISTOR R.F SOT363
From old datasheet system

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    BFT92 Q62702-F1062 BFT92Q62702-F1062

SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
Part No. BFT92 Q62702-F1062 BFT92Q62702-F1062
OCR Text ...JC = VJS = EG = TNOM 0.90551 12.196 1.2703 0.79584 0.66749 0.32167 0.21451 922.07 0.3 0.75 1.11 300 fA mA V fF V eV K 0.016123 A 0...2 RthJS K/W Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0.1 0.05 0....
Description PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)
From old datasheet system
TRANSISTOR UHF BIPOLAR BREITBAND

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    Avago Technologies
Part No. MGA-25203
OCR Text ...ias network omn gnd 2 gnd 3 gnd 12 gnd 10 nc bsply bsw nc nc rfout gnd gnd 16 gnd vcc2 vcc1 17 gnd gnd gnd gnd bctrl rfin 5 15 1 3 6 7 8 9 10 11 12 13 14 2 4 3mm x 3mm x 1mm mga-25203 5.1-5.9ghz 3x3mm wifi and wimax power amplifi er data sh...
Description 5.1-5.9GHz 3x3mm WiFi and WiMAX Power Amplifier

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    MT4S200U

Toshiba Semiconductor
Part No. MT4S200U
OCR Text ...) glass epoxy PCB) 1 2006-12-26 MT4S200U Microwave Characteristics (Ta = 25C) Characteristics Transition Frequency Insertion Gain Symbol fT |S21e| (1) |S21e| (2) NF(1) NF(2) 2 2 Test Condition VCE=3V, IC=15mA VCE=3V, IC=15mA,...
Description UHF-SHF Low Noise Amplifier Application

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    UPG2181T5R UPG2181T5R-E2 UPG2181T5R-E2A

California Eastern Labs
Part No. UPG2181T5R UPG2181T5R-E2 UPG2181T5R-E2A
OCR Text ...nt0 Pin Name GND GND Pin No. 11 12 Pin Name GND ANT1 Top View 16 15 14 13 12 11 17 18 19 20 1 2 3 4 5 6 10 Bottom View 11 12 13 14 15 16 2181 9 8 7 Exposed pad : GND TRUTH TABLE CONTROL VOLTAGE Tx VDD High High High High ...
Description GaAs INTEGRATED CIRCUIT HIGH POWER DP4T SWITCH FOR WiMAX

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