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ON0793 L6726A07 A472M 332ME 10C273J ON0793 UDZ5V1BF 332ME
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  15 25 35a Datasheet PDF File

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    IGB15N60T

INFINEON[Infineon Technologies AG]
Part No. IGB15N60T
OCR Text ... Symbol VCE IC Value 600 30 15 Unit V A ICpuls VGE tSC Ptot Tj Tstg - 45 45 20 5 130 -40...+175 -55...+175 260 V s W C VGE =...25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage...
Description Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...

File Size 361.51K  /  12 Page

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    H40N03E

Hi-Sincerity Mocroelectronics
Part No. H40N03E
OCR Text ...15V, VGS=0V, f=1MHz VDD=15V, RL=15, ID=1A VGEN=10V, RG=24 VDS=15V, ID=35a, VGS=10V - 18.4 3.57 2.9 11.7 3.87 32.13 5.4 1176.3 268.43 1...25 C 20 TJ=125 C -55 C 0 o o o 3.5V 20 3.0V 0 0 1 2 3 4 5 2 2.5 3 3.5 4 4.5...
Description N-Channel Enhancement-Mode MOSFET

File Size 84.26K  /  5 Page

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    Intersil
Part No. FSPJ260F FSPJ260R FN4879
OCR Text ... 200 1.87 0.032 0.061 35 140 65 15 140 60 30 0.65 UNITS V V V V A A nA nA V ns ns ns ns nC nC nC nC nC V pF pF pF oC/W Drain to Source...25 1.87 0.032 MIN 200 1.5 4.5 100 50 2.20 0.036 MAX UNITS V V nA A V 100K RAD 300K RAD ISD = 55A IS...
Description N-Channel Power MOSFETs N-Channel Power MOSFETs
From old datasheet system

File Size 82.94K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. RLP1N06CLE
OCR Text ... 200 COSS 150 100 50 CRSS 0 0 5 15 20 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 0V RGS DUT VGS VGS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD RL VDS + CISS FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGUR...
Description 1A/ 55V/ 0.750 Ohm/Voltage Clamping/ Current Limited/ N-Channel Power MOSFET
1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET
1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,电压箝位,电流限定,N沟道功率MOS场效应管)

File Size 47.02K  /  7 Page

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    Infineon
Part No. G15N60
OCR Text ...anche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 , start at Tj = 25C Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from ...
Description Fast IGBT

File Size 499.21K  /  11 Page

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    Advanced Power Technolo...
Part No. APT35GN120L2DQ2
OCR Text ... 120 9.5 220 15 130 105 10 24 22 300 55 tbd 2395 2...25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 ...
Description IGBT

File Size 217.71K  /  9 Page

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    IXYS, Corp.
Part No. DSEI2X61-06C DSEI2X61-12B
OCR Text ... /dt v 200 600 1000 0 400 800 5 15 25 0 10 20 30 10 100 1000 0.0 0.2 0.4 0.6 0.8 0.0 0.4 0.8 1.2 0 20 40 60 80 100 120 140 160 i rm q r i f a v f -di f /dt -di f /dt a/ s a v s s a/ s t vj = 100 c v r = 100v t vj = 1...
Description ARRAY OF INDEPENDENT DIODES|SOT-227B 与独立二极管组成的阵列|的SOT - 227B

File Size 396.30K  /  8 Page

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