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Samsung Electronic
SAMSUNG[Samsung semiconductor]
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| Part No. |
S5K3A1EA13 S5K3A1EA S5K3A1EA01 S5K3A1EA02 S5K3A1EA03
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| OCR Text |
...TURES
-- Process Technology: 0.18m Dual Gate Oxide SPQM CMOS -- Optical Size: 1/3 inch -- Unit Pixel: 3.8 m X 3.8 m -- Effective Resolution: 1280X1024, SXGA -- Line Progressive Read Out. -- 10-bit Raw Image Data Output -- Windowing and Pan... |
| Description |
(1/3 SXGA CMOS Image Sensor)
(1/3” SXGA CMOS Image Sensor)
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| File Size |
323.65K /
34 Page |
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it Online |
Download Datasheet
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TMT[Taiwan Memory Technology]
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| Part No. |
T71L6816A
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| OCR Text |
...terface and is implemented in 0.18m CMOS technology. The T71L6816A supports a wide variety of switch features and provides flexible configur...bit wide (di-bit) transmit and receive data paths. In the case of the REFCLK is 10 times the data ra... |
| Description |
Sixteen-port 10/100 Switch
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| File Size |
800.45K /
22 Page |
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it Online |
Download Datasheet |
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Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
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| Part No. |
IDT71P74104S167BQ IDT71P74804S250BQ IDT71P74604S200BQ IDT71P74204S167BQ IDT71P74604S167BQ
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| OCR Text |
...driver ( note2 ) cq q ( note1 ) 18m memory array cq notes 1) represents 8 data si g nal lines for x8, 9 si g nal lines for x9, 18 si g nal l...bit), 71p74104 (2m x 9-bit), 71p74804 (1m x 18-bit) 71p74604 (512k x 36-bit) advance in... |
| Description |
18Mb Pipelined QDR II SRAM Burst of 4 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDR II SRAM Burst of 4 1M X 18 QDR SRAM, 0.45 ns, PBGA165
18Mb Pipelined QDR II SRAM Burst of 4 512K X 36 QDR SRAM, 0.45 ns, PBGA165
18Mb Pipelined QDR II SRAM Burst of 4 2M X 8 QDR SRAM, 0.5 ns, PBGA165
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| File Size |
585.06K /
22 Page |
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it Online |
Download Datasheet |
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