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FUJI[Fuji Electric]
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Part No. |
2SK3580-01MR
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OCR Text |
...ting Tch):Vcc=48V,I(AV)<=12A
200
150
EAV [mJ]
0 25 50 75 100 125 150
PD [W]
100
50
0 0 25 50 75 100 125 150
Tc [C]
starting Tch [C]
Typical Output Characteristics
30
Typical Transfer Characteristic
100
1... |
Description |
N-CHANNEL SILICON POWER MOSFET
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File Size |
96.13K /
4 Page |
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it Online |
Download Datasheet
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HITACHI[Hitachi Semiconductor]
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Part No. |
BB402M
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OCR Text |
...stics; (NF = 1.7 dB typ. at f = 200 MHz) * Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. * Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
3 4 2 1
1. Source ... |
Description |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
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File Size |
63.76K /
11 Page |
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it Online |
Download Datasheet
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FUJI[Fuji Electric]
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Part No. |
2SK3775-01
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OCR Text |
...mm2)
4 300
3
PD [W]
200
PD [W]
2
100 1
0 0 25 50 75 100 125 150
0 0 25 50 75 100 125 150
Tc [C]
Tc [C]
8...240V 10
3
VGS [V]
C [pF]
8
10
2
Coss
6
4 10 2
1
Crss
0 0 10 20 30 ... |
Description |
N-CHANNEL SILICON POWER MOSFET
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File Size |
90.84K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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Part No. |
APT30M90AVR
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OCR Text |
....6 MIN TYP MAX UNIT
4100 700 200 130 25 55 12 10 43 7
4950 980 300 195 37 77 24 20 65 14
ns nC pF
Gate-Source Charge Gate-Drain ("...240V 8
10 5
1 .5
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES... |
Description |
POWER MOS V 300V 33A 0.090 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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File Size |
64.32K /
4 Page |
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it Online |
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Powerex Inc
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Part No. |
M57182N-315
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OCR Text |
200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
High Voltage Input DC-to-DC Converter
A
C
B 1 12
H
...240V AC. This device is best suited for use as a pre-regulator for standard DC-to-DC converters. Fea... |
Description |
DC to DC Converter From old datasheet system
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File Size |
47.71K /
4 Page |
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it Online |
Download Datasheet
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FUJI[Fuji Electric]
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Part No. |
2SK3777-01R
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OCR Text |
...,Tch=25 C
20V 10V 8V
100
200
80
PD [W]
ID [A]
60
7V
100
40 6.5V
20
VGS=6.0V
0 0 25 50 75 100 125 150
...240V
VGS(th) [V]
4.5
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min.
... |
Description |
N-CHANNEL SILICON POWER MOSFET
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File Size |
101.10K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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