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  200a 600v Datasheet PDF File

For 200a 600v Found Datasheets File :: 2331    Search Time::1.969ms    
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    SII200N12

Sirectifier Semiconductors
Part No. SII200N12
OCR Text ...VGE = 20V, VCE = 0 VCE(sat) IC =200a; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following conditions Coes VGE = 0,...600v, IC = 200a tr RGon = RGoff =4.7 , Tj = 125oC td(off) VGE = 15V tf FWD under following conditio...
Description NPT IGBT Modules

File Size 928.43K  /  7 Page

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    DYNEX SEMICONDUCTOR LTD
Part No. DIM200WHS12-A000
OCR Text ... ce(sat) * (typ) 2.2v i c (max) 200a i c(pk) (max) 400a *(measured at the power busbars and not the auxiliary terminals) dim200whs12-a000 ha...600v r g(on) = r g(off) = 4.7 ? l ~ 70nh i f = 200a, v r = 600v, di f /dt = 2300a/ s parameter ...
Description 200 A, 1200 V, N-CHANNEL IGBT

File Size 166.00K  /  8 Page

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    FGH40N60UFD

Fairchild Semiconductor
Part No. FGH40N60UFD
OCR Text ...C TC = 25oC IES =20A, dIES/dt = 200a/s TC = 125oC o Min. - Typ. 1.95 1.85 45 140 75 375 Max 2.6 - Units V Diode Reverse ...600v, 40A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output Character...
Description 600v, 40A Field Stop IGBT

File Size 790.37K  /  9 Page

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    FGH40N60SFD

Fairchild Semiconductor
Part No. FGH40N60SFD
OCR Text ...C TC = 25oC IES =20A, dIES/dt = 200a/s TC = 125oC o Min. - Typ. 1.95 1.85 45 140 75 375 Max 2.6 - Units V Diode Reverse ...600v, 40A Field Stop IGBT Typical Performance Characteristics Figure 1. Typical Output Character...
Description 600v, 40A Field Stop IGBT

File Size 802.76K  /  9 Page

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    DYNEX SEMICONDUCTOR LTD
Part No. DIM200MKS12-A000
OCR Text ... ce(sat) * (typ) 2.2v i c (max) 200a i c(pk) (max) 400a *(measured at the power busbars and not the auxiliary terminals) dim200mks12-a000 ig...600v r g(on) = r g(off) = 4.7 ? l ~ 100nh i f = 200a, v r = 600v, di f /dt = 2100a/ s parameter...
Description 200 A, 1200 V, N-CHANNEL IGBT

File Size 169.43K  /  10 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APTGF180H60G
OCR Text ... Test Conditions VR=600v IF = 200a IF = 400A IF = 200a IF = 200a VR = 400V di/dt =400A/s Tj = 25C Tj = 125C Tc = 80C Min 600 Typ Max 350 750 Unit V A A Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 200 1.6 1.9 1.4 180 ...
Description APTGF180H60G NPT IGBT Power Module

File Size 277.63K  /  6 Page

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    FGA25N120FTD

Fairchild Semiconductor
Part No. FGA25N120FTD
OCR Text ...covery Time IES =25A, dIES/dt = 200a/s ns Diode Reverse Recovery Time TC = 25oC TC = 125 C TC = 25oC TC = 125 C o A C Diode ...600v 400V 100s 10 1ms 10 ms 9 1 DC 6 3 0.1 *Notes: o 1. TC = 25 C o 2....
Description 1200V, 25A Field Stop Trench IGBT

File Size 695.07K  /  9 Page

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    CM200DY-24 CM200DY-24H

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. CM200DY-24 CM200DY-24H
OCR Text ... = 0V IC = 20mA, VCE = 10V IC = 200a, VGE = 15V IC = 200a, VGE = 15V, Tj = 150C Total Gate Charge Emitter-Collector Voltage VCC = 600v, IC = 200a, VGE = 15V IE = 200a, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.5 2.25 1000 - Max. 1.0 0.5 ...
Description IGBT Modules:1200V
HIGH POWER SWITCHING USE INSULATED TYPE

File Size 49.09K  /  4 Page

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    FGA25N120ANTD

FAIRCHILD[Fairchild Semiconductor]
Part No. FGA25N120ANTD
OCR Text ...rnet , Irr [A] 25 di/dt = 200a/s 20 TJ = 125C 15 di/dt = 100A/s 10 1 T J = 25C T C = 125C 0.1 0.0 0.4 0.8 1.2 T C = 25C 1.6 2.0 5 0 5 10 15 20 25 Forward Voltage , VF [V] Forward Current , IF [A] Figur...
Description 1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology
1200V NPT Trench IGBT

File Size 863.48K  /  9 Page

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    ADPOW[Advanced Power Technology]
Part No. APTGF180H60
OCR Text ...H60 - Rev 1 March, 2004 IF = 200a IF = 400A IF = 200a IF = 200a VR = 400V di/dt =400A/s IF = 200a VR = 400V di/dt =400A/s Tj = 125C Tj = 25C Tj = 125C Typ 200 1.6 1.9 1.4 180 220 Max 1.8 Unit A V ns APTGF180H60 Thermal...
Description Full Bridge - IGBT
Full - Bridge NPT IGBT Power Module

File Size 291.71K  /  6 Page

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For 200a 600v Found Datasheets File :: 2331    Search Time::1.969ms    
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