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  2014 Datasheet PDF File

For 2014 Found Datasheets File :: 2277    Search Time::1.984ms    
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    TOSHIBA
Part No. SSM6N57NU
OCR Text 2014-04-04 rev.2.0 ssm6n57nu 1 mosfets silicon n-channel mos ssm6n57nu ssm6n57nu ssm6n57nu ssm6n57nu start of commercial production 2012-07 1. 1. 1. 1. applications applications applications applications ? power management switches ? d...
Description Small-signal MOSFET 2 in 1

File Size 230.68K  /  9 Page

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    SBM3060VFCT

Pan Jit International Inc.
Part No. SBM3060VFCT
OCR Text 2014-rev.00 sbm3060vfct ultra low vf schottky rectifier voltage 60 volt 30 ampere features ? ultra low forward voltage drop, low power loss ? high efficiency operation ? lead free in compliance with eu rohs 2011/65/eu directive mechanical ...
Description Ultra low forward voltage drop, low power loss

File Size 119.84K  /  4 Page

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    TOSHIBA
Part No. SSM6P39TU
OCR Text 2014-03-01 1 toshiba field-effect transistor silicon p channel mos type ssm6p39tu power management switch applications high-speed switching applications ? 1.8 v drive ? p-ch 2-in-1 ? low on-resistance: r on = 4...
Description Small-signal MOSFET 2 in 1

File Size 197.77K  /  7 Page

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    PESD5V0X2UAM

NXP Semiconductors
Part No. PESD5V0X2UAM
OCR Text 2014 product data sheet scan or click this qr code to view the latest information for this product 1. general description ultra low capacitance unidirectional double electrostatic discharge (esd) protection diode in a dfn1006-3 (sot883) lea...
Description Ultra low capacitance unidirectional double ESD protection diode

File Size 202.47K  /  13 Page

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    PESD5V0X2UAMB

NXP Semiconductors
Part No. PESD5V0X2UAMB
OCR Text 2014 product data sheet scan or click this qr code to view the latest information for this product 1. general description ultra low capacitance unidirectional double electrostatic discharge (esd) protection diode in a dfn1006b-3 (sot883b) l...
Description Ultra low capacitance unidirectional double ESD protection diode

File Size 201.97K  /  13 Page

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    IPL60R360P6S

Infineon Technologies AG
Infineon Technologies A...
Part No. IPL60R360P6S
OCR Text ...nsistor ipl60r360p6s rev.2.0,2014-07-08 final data sheet thinpak5x6 1description coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineo...
Description IGBT Modules
Very high commutation ruggedness

File Size 1,345.05K  /  14 Page

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    TOSHIBA
Part No. TPH4R606NH
OCR Text 2014-01-07 rev.4.0 tph4r606nh 1 mosfets silicon n-channel mos (u-mos -h) tph4r606nh tph4r606nh tph4r606nh tph4r606nh start of commercial production 2011-11 1. 1. 1. 1. applications applications applications applications ? switching vo...
Description Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 239.17K  /  9 Page

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    TOSHIBA
Part No. TK75J04K3Z
OCR Text 2014-01-17 rev.2.0 tk75j04k3z 1 mosfets silicon n-channel mos (u-mos ) tk75j04k3z tk75j04k3z tk75j04k3z tk75j04k3z start of commercial production 2009-10 1. 1. 1. 1. applications applications applications applications ? motor drivers ...
Description Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 247.76K  /  9 Page

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