20a 600v pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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20a 600v Datasheet PDF File

For 20a 600v Found Datasheets File :: 1430 Search Time::1.422ms
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				FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
Part No.	FGL60N100BNTD FGL60N100BNTDTU
OCR Text	...ecovery Time, trr [ ] di/dt=-20a/ TC=25 12 1000 100 Reverse Recovery Current Irr [A] trr Reverse Current, IR [uA] 1.0 10 T C = 150 10 1 0.1 0.01 1E-3 0 300 600 900 T C= 25 0.8 Irr 8 0.6 6 0....
Description	NPT-Trench IGBT 1000V, 60A NPT-Trench IGBT
File Size	678.86K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGPS40B120UD
OCR Text	...V) VCE (V) 20 18 16 14 ICE = 20a ICE = 40A ICE = 80A 12 10 8 6 4 2 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 20a ICE = 40A ICE = 80A ...600v RG= 4.7; VGE= 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 125C; L=200H; VCE= 600v RG= 4.7;...
Description	1200V UltraFast 5-40 kHz Copack IGBT in a TO-274AA package INSULATED GATE BIPOLAR TRANSISTOR
File Size	115.79K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGPS40B120U
OCR Text	... 20 18 16 14 VCE (V) ICE = 20a ICE = 40A ICE = 80A 12 10 8 6 4 2 0 5 10 VGE (V) 12 10 8 6 4 2 ICE = 20a ICE = 40A ICE = 80A ...600v RG= 4.7; VGE= 15V Fig. 13 - Typ. Switching Time vs. IC TJ = 125C; L=200H; VCE= 600v RG= 4.7;...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	95.43K / 10 Page	View it Online	Download Datasheet

				Mitsubishi Electric & Electronics USA
Part No.	PS21865
OCR Text	...NTEGRATED POWER FUNCTIONS 600v/20a low-loss 5th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS * * * * * For upper-leg IGBTS : Drive circuit, High voltage...
Description	TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600v V(BR)CES,20a I(C)
File Size	118.29K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SGL60N90DG SGL60N90DG3 SGL60N90DG3TU SGL60N90DG3YDTU SGL60N90DG3M1TU
OCR Text	...vs. di/dt 1.6 16 di/dt = -20a/ TC = 25 14 12 10 trr 8 6 4 2 0 10 20 30 40 50 60 1000 Reverse Recovery Time, trr [us] 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 TC = 25 TC = 150 ------ Reverse Recovery Current, Irr [A] 100 R...
Description	Copak Discrete IGBT General Description
File Size	360.99K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKB04N60 SKP04N60
OCR Text	...0 SKB04N60 Ic 10A t p =2 s 20a 15 s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 1A 50 s 200 s 1ms T C =80C 10A T C =110...600v, start at Tj = 25C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector cur...
Description	IGBTs & DuoPacks - 4A 600v TO220aB IGBT Diode IGBTs & DuoPacks - 4A 600v TO263AB SMD IGBT Diode Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	390.12K / 13 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD.
Part No.	7MBR10SA120
OCR Text	...[ A ] 15 6 10 4 Ic= 20a 2 Ic= 10A Ic= 5A 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate -...600v, Ic=10A, Tj= 25 C 1000 25 o VGE=0V, f= 1MHz, Tj= 25 C o 800 Capacitance : Cies, Coes...
Description	IGBT(1200V/10A)
File Size	618.80K / 7 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CM10MD-12H
OCR Text	...IE = 10A, VGE = 0V die / dt = - 20a / s IGBT part, Per 1/6 module FWDi part, Per 1/6 module Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage In...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	154.05K / 5 Page	View it Online	Download Datasheet

				Powerex, Inc. Powerex Inc POWEREX[Powerex Power Semiconductors]
Part No.	CM10MD1-24H CM10MD1-24
OCR Text	...V IE = 10A, VGE = 0V, diE/dt = -20a/ms Per IGBT Per FWDi VGE = 0V, VCE = 10V Test Conditions VR = VRRM, Tj = 150C IF = 10A Per Diode VCE = V...600v 102 td(on) t rr 12 102 Irr 100 101 8 tr VCC = 600v VGE = 15V RG = 3...
Description	CI Module Three Phase Converter Three Phase Inverter 10 Amperes/1200 Volts 10 A, 1200 V, N-CHANNEL IGBT CI Module Three Phase Converter Three Phase Inverter 10 Amperes/1200 Volts TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,10A I(C)
File Size	61.27K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
Part No.	FS10SM-16 FS10SM-16A
OCR Text	... 0.8 30 0.6 20 ID = 20a 0.4 10 10A 5A 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 ...600v 24 8 16 TC = 125C 75C 25C 4 8 0 0 20 40 60 80 100 0 ...
Description	Power MOSFETs: FS Series, High Voltage, 800V Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	46.17K / 4 Page	View it Online	Download Datasheet

For 20a 600v Found Datasheets File :: 1430 Search Time::1.422ms
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