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    Mitsubishi Electric Corporation
Part No. MH32D72KLH-75
OCR Text ...1-1.0 MITSUBISHI ELECTRIC 24.Nov.2000 1 Preliminary Spec. Some contents are subject to change without notice. MITSUBISHI LS...Column Address in conjunction with BA0,1. The Row Address is specif ied by A0-12. The Column Address...
Description 2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module

File Size 391.75K  /  39 Page

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    Elpida Memory, Inc.
Part No. HM5257165B HM5257165BTD-A6 HM5257165B-A6 HM5257165B-75 HM5257165BTD-75 HM5257405B-75 HM5257405B-A6 HM5257405BTD-A6 HM5257805BTD-A6 HM5257805B-A6 HM5257405BTD-75 HM5257805BTD-75 HM5257805B-75
OCR Text ...3 14 15 16 17 18 19 20 21 22 23 24 25 26 27 (Top view) 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS ...Column address A0 to A12 A0 to A9 Pin name WE DQMU/DQML CLK CKE VCC VSS VCCQ VSS Q NC Function Write...
Description 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM
Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-30
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh
Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:18; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:18-32
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM
CABLE ASSEMBLY
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM

File Size 459.48K  /  62 Page

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    HM5165805F HM5165805FJ HM5164805FLJ HM5165805FTT HM5165805FJ-5 HM5164805FJ HM5165805FL HM5165805FLJ HM5164805FJ-6 HM5164

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Hitachi Semiconductor
Hitachi,Ltd.
Part No. HM5165805F HM5165805FJ HM5164805FLJ HM5165805FTT HM5165805FJ-5 HM5164805FJ HM5165805FL HM5165805FLJ HM5164805FJ-6 HM5164805FTT HM5164805FLTT HM5164805FJ-5 HM5165805FJ-6 HM5164805FLJ-5 HM5164805FTT-5 HM5165805FLJ-5 HM5164805FTT-6 HM5165805FLTT HM5164805FLTT-5 HM5165805FLJ-6 HM5165805FTT-6 HM5165805FTT-5
OCR Text ...5 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 V SS I/O7 I/O6 I/O5 I/O4 V SS CAS OE A12 A11 A10 A9 A8 A7 A6 V SS VCC I/O0 I/O...Column address A0 to A9 Data input/output Row address strobe Column address strobe Write enable Outp...
Description 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh 64目等内存 Mword × 8位)8亩刷 4亩刷
(HM5164805F / HM5165805F) 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh

File Size 488.63K  /  35 Page

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    Motorola
Part No. 9S12DP512DGV1
OCR Text ...12 device guide v01.21 3 v01.06 24 jul 2002 24 jul 2002 - updated spi electrical characteristics. - updated derivative differences table. - ...column of signal table. - added pull device description for modc pin. - corrected xclks ?gure titles...
Description 9S12Dx512 Device Guide

File Size 963.50K  /  124 Page

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text ...RAS *A11(N.C) 1 2 3 4 5 6 24 23 22 21 20 19 VSS DQ3 DQ2 CAS OE A9 VCC DQ0 DQ1 W RAS *A11(N.C) 1 2 3 4 5 6 24 23 22 21 20 1...Column Address Strobe Read/Write Input Data Output Enable Power(+5.0V) Power(+3.3V) No Connection (2...
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

File Size 254.50K  /  21 Page

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    K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text ...RAS *A11(N.C) 1 2 3 4 5 6 24 23 22 21 20 19 VSS DQ3 DQ2 CAS OE A9 VCC DQ0 DQ1 W RAS *A11(N.C) 1 2 3 4 5 6 24 23 22 21 20 1...Column Address Strobe Read/Write Input Data Output Enable Power(+5V) Power(+3.3V) No Connection (2K ...
Description 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

File Size 223.25K  /  20 Page

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    INTEGRATED SILICON SOLUTION INC
Part No. IS42SM32400E-75EBLI
OCR Text ...3 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 v ss dq7 v ss q...column address input ba0, ba1 bank select address dq0 to dq7 data i/o clk system clock input c...
Description 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90

File Size 764.69K  /  26 Page

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    Vishay
Part No. APD-192G064
OCR Text ...010 [177.17 0.254] 6.663 [169.24] 0.403 [10.24] 0.840 [21.34] 6.19 [157.23] 5.090 [129.29] 8.527 [216.59] 11.86 [301.24] ref. optical specifications viewing area: 15.33" [389.38mm] w x 5.09"[129.29mm] h. pixel pitch: 0.080" [2.03mm]. p...
Description 192 x 64 Graphics Display with Drive Electronics and TTL Level Data Interface, Large and Bright Characters and Graphics, Slim Profile, Highly Visible for Long-Distance Viewing

File Size 42.41K  /  1 Page

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    HB52R649E1U-B6B HB52R649E1U-A6B

Elpida Memory
Part No. HB52R649E1U-B6B HB52R649E1U-A6B
OCR Text ... v ss 65 dq21 107 v ss 149 dq53 24 nc 66 dq22 108 nc 150 dq54 25 nc 67 dq23 109 nc 151 dq55 26 v cc 68 v ss 110 v cc 152 v ss 27 w 69 dq24 1...column address a0 to a9, a11 ba0/ba1 bank select address dq0 to dq63 data input/output cb0 to cb7 ch...
Description 512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM

File Size 146.38K  /  20 Page

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    HM5257165B HM5257405B-A6 HM5257805BTD-A6 HM5257165BTD-75 HM5257805B-A6 HM5257165B-A6 HM5257405BTD-75 HM5257805B-75 HM525

Elpida Memory
Part No. HM5257165B HM5257405B-A6 HM5257805BTD-A6 HM5257165BTD-75 HM5257805B-A6 HM5257165B-A6 HM5257405BTD-75 HM5257805B-75 HM5257405B-75 HM5257405BTD-A6 HM5257165BTD-A6 HM5257165B-75 HM5257805BTD-75
OCR Text ...3 14 15 16 17 18 19 20 21 22 23 24 25 26 27 (Top view) 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS ...Column address A0 to A12 A0 to A9 Pin name WE DQMU/DQML CLK CKE VCC VSS VCCQ VSS Q NC Function Write...
Description 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword ?16-bit ?4-bank/16-Mword ?8-bit ?4-bank /32-Mword ?4-bit ?4-bank PC/133, PC/100 SDRAM
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM

File Size 526.88K  /  62 Page

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