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    MOTOROLA[Motorola, Inc]
Part No. MTD2N50E ON2497
OCR Text ...down Voltage (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 500 Vdc, VGS = 0 Vdc) (VD...300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperatu...
Description From old datasheet system
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

File Size 298.64K  /  10 Page

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Part No. UPC494C-A
OCR Text ...ation. uncommitted outputs for 250-ma sink or source. with miss-operation prevention circuit for low level supply voltage. full pin-compa...300)) m pc494g 16-pin plastic sop (9.53 mm (375)) m pc494gs 16-pin plastic sop (7.62 mm (300)) the m...
Description 0.25 A SWITCHING CONTROLLER, 300 kHz SWITCHING FREQ-MAX, PDIP16

File Size 156.39K  /  20 Page

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    ST Microelectronics
Part No. STGB30V60DF STGWT30V60DF
OCR Text ...rrent (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input cap...300 100 125 v cc =400v, v ge =15v i c =30a, rg=10 400 500 600 eon eoff 150 0 700 800 am17425v1 e(j) ...
Description Trench gate field-stop IGBT, V series 600 V, 30 A very high speed

File Size 1,876.47K  /  22 Page

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    IRGR3B60KD2 IRGR3B60KD2PBF

International Rectifier
Part No. IRGR3B60KD2 IRGR3B60KD2PBF
OCR Text ...ww.irf.com 5 IRGR3B60KD2 250 1000 200 EON Swiching Time (ns) Energy (J) 150 EOFF 100 100 tdOFF tF tR tdON 50 ...300 400 500 10 0 100 200 300 400 500 RG ( ) RG ( ) Fig. 15 - Typ. Energy Loss vs. RG TJ = 1...
Description 600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 253.00K  /  13 Page

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    JIANGHAI[Jianghai Europe GmbH]
Part No. CD263BK
OCR Text ...(mArms) 105 120 130 180 180 220 250 315 435 500 720 1 000 882 1 050 1 120 1 670 1 380 1 740 1 750 2 110 2 040 2 580 92 105 120 130 220 230 265 315 500 615 761 1 050 1 010 1 300 1 250 1 740 1 570 2 110 1 910 2 580 92 105 120 130 150 220 250 ...
Description EC Radial Standard 105∑C 2.000 - 3.000h Lifetime(Radial)

File Size 902.31K  /  5 Page

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    IRKTF180-8HK IRKTF180-12HK IRKTF180 IRKHF180-08HJ IRKHF180-08HK IRKLF180-08HJ IRKLF180-08HK IRKTF180-08HJ IRKTF180-08HK

AEGIS Semicondutores LTDA
International Rectifier
Part No. IRKTF180-8HK IRKTF180-12HK IRKTF180 IRKHF180-08HJ IRKHF180-08HK IRKLF180-08HJ IRKLF180-08HK IRKTF180-08HJ IRKTF180-08HK IRKUF180-08HJ IRKUF180-08HK IRKVF180-08HJ IRKVF180-08HK IRKHF180-04HJ IRKVF180-04HK IRKHF180-04HK IRKLF180-04HJ IRKLF180-04HK IRKTF180-04HJ IRKTF180-04HK IRKUF180-04HJ IRKUF180-04HK IRKVF180-04HJ IRKLF180-12HJ IRKLF180-12HK IRKUF180-12HJ IRKHF180-12HJ IRKHF180-12HK IRKTF180-12HJ IRKUF180-12HK
OCR Text ...0 60 90 120 1 80 100 150 200 DC 250 300 Averag e O n-state C urren t (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 IRK.F180.. Series Bulletin I27100 rev. C 03/01 M ax...
Description 800V Doubler Circuit Positive Control Inverter Thyristor/Diode in a MAGN-A-Pak package 800V的倍压电路积极控制逆变晶闸二极管的磁共 à - Pak封装
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR (MAGN-A-pak Power Modules)
800V Doubler Circuit Negative Control Inverter Thyristor/Diode in a MAGN-A-Pak package
800V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a MAGN-A-Pak package
800V Center-Tap Common Cathode Inverter Thyristor/Thyristor in a MAGN-A-Pak package
800V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package
400V Doubler Circuit Positive Control Inverter Thyristor/Diode in a MAGN-A-Pak package
400V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package
400V Doubler Circuit Negative Control Inverter Thyristor/Diode in a MAGN-A-Pak package
400V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a MAGN-A-Pak package
400V Center-Tap Common Cathode Inverter Thyristor/Thyristor in a MAGN-A-Pak package
1200V Doubler Circuit Negative Control Inverter Thyristor/Diode in a MAGN-A-Pak package
1200V Center-Tap Common Cathode Inverter Thyristor/Thyristor in a MAGN-A-Pak package
1200V Doubler Circuit Positive Control Inverter Thyristor/Diode in a MAGN-A-Pak package
1200V Doubler Circuit Positive Control Inverter Thyristor/Thyristor in a MAGN-A-Pak package

File Size 225.42K  /  8 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. ISL9214RZ-T ISL9214RZ ISL9214 214Z ISL9214IRZ-T
OCR Text ...put (Note 3) 20 150 80 250 - mV mV ISTANDBY EN = HIGH or both inputs are floating ICRDL IUSB EN = LOW or floating EN = HIGH ...300 250 200 2.5 2.8 3.0 3.3 VBAT (V) 3.5 3.8 4.0 USB CRDL, RICDL = 12.4K CHARGE CURRENT (mA) 600 550...
Description Li-ion/Li-Polymer Battery Charger Accepting Two Power Sources; Temperature Range: -40&deg;C to 85&deg;C; Package: 10-DFN T&amp;R 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10

File Size 186.07K  /  11 Page

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    IXFH40N50Q2

IXYS Corporation
Part No. IXFH40N50Q2
OCR Text ...40 A ID25 RDS(on) = 0.16 trr 250 ns Maximum Ratings 500 500 30 40 40 160 40 50 2.5 20 560 -55 ... +150 150 -55 ... +150 300 V V V V A A A mJ J V/ns W C C C C TO-247 AD (IXFH) (TAB) Features Double metal process for low gate r...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 552.84K  /  5 Page

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    IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXFK25N90 IXFK26N90 IXFX26N90 25N90 26N90 IXFX25N90
OCR Text 250 ns 900 V 25 A 0.33 W 250 ns Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weigh...300 Features * International standard packages * Low RDS (on) HDMOSTM process * Rugged polysilico...
Description HiPerFET Power MOSFETs HiPerFET功率MOSFET

File Size 115.21K  /  4 Page

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