3.8ghz pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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3.8ghz Datasheet PDF File

For 3.8ghz Found Datasheets File :: 971 Search Time::1.375ms
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				Sony
Part No.	CXG1045N
OCR Text	...GHz * Small package SSOP-8pin: (3 x 6.4 x 1.25mm) * Low current: 200A (Typ.) Application * GSM900 or GSM1800 handsets * GSM900/GSM1800 dualband handsets Structure GaAs J-FET MMIC Operating Condition Control voltage: Vctl (H) - Vctl (L): 2.5...
Description	High Power DPDT Switch for GSM From old datasheet system
File Size	60.34K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FA01219A
OCR Text	... * High efficiency * High power 3.5V 22.5B 50% 30.5dBm 2 7 3 6 4 5 APPLICATION PDC0.8GHz GND 10.0 0.8 2.0 6.0 1 RF INPUT 2 VD1 3 4 5 6 GND VD2 RF OUTPUT GND 7 GND 8 VG1,2 tolerance:0.2 ABSOLUTE MAXIM...
Description	GaAs FET HYBRID IC From old datasheet system
File Size	22.92K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLC057WG
OCR Text	...Tc = 25C Condition Rating 15 -5 3.75 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operatio...8GHz IDS 0.6 IDSS Output Power (dBm) P1dB (dBm) 28 IDS 0.6 IDSS 26 Pout 24 22 20 18 16 ...
Description	C-Band Power GaAs FET
File Size	86.42K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLC157XP
OCR Text	...ndition Rating 15 -5 Tc = 25C 8.3 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation o...8GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 400mA VDS = 5V, IDS = 30mA IGS = -30A Min. 1...
Description	GaAs FET & HEMT Chips
File Size	55.15K / 4 Page	View it Online	Download Datasheet

				Fujitsu, Ltd. FUJITSU[Fujitsu Media Devices Limited] Fujitsu Component Limited.
Part No.	FRM5W232BS
OCR Text	...S (Tc=25C, =1,310/1,550nm, VDD=+3.3V unless otherwise specified) Parameter APD Responsivity Symbol R15 R13 APD Breakdown Voltage Temperatur...8GHz 2.5Gb/s, NRZ, PRBS=223-1, B.E.R.=10-10, Rext=-13dB, VR is set at optimum value Ta=25C Ta=-40 to...
Description	Incorporates a 30 micron InGaAs Avalanche Photodiode 采用0微米铟镓砷雪崩光电二极管
File Size	111.13K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1377 BFP180
OCR Text	...FP 180 RDs Q62702-F1377 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...8GHz VCE = Parameter 16 8V dB 3V G 16 G 12 5V 10 14 2V 8 12 6 10 1V 4 8 0.7V 3V ...
Description	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) From old datasheet system
File Size	76.23K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TB31356AFL
OCR Text	...MHz Current consumption Total : 3.7mA(PLL1+PLL2+XIN) (Typ.) PLL1 : 2.7mA (PLL1+XIN) (Typ.) PLL2 : 1.1mA (PLL2+XIN) (Typ.) (XIN=0.1mA Typ.) Operating voltage : 2.4 to 3.3V Independent battery save supported Compact leadless package : QON16pi...
Description	1.8GHz,600MHz DUAL-PLL FREQUENCY SYNTHESIZER
File Size	294.71K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... ETC INFINEON[Infineon Technologies AG]
Part No.	CFH800
OCR Text	...assignment: 1 = gate 2 = source 3 = drain 4 = source CFH800 ________________________________________________________________________________________________________ * * * ESD: Type Marking Ordering code (taped) Packa...
Description	Typical Common Source S - Parameters
File Size	71.94K / 7 Page	View it Online	Download Datasheet

				United Monolithic Semic... UMS[United Monolithic Semiconductors]
Part No.	CHA7010-99 CHA7010-99F_00 CHA7010 CHA7010-99F/00
OCR Text	...2) Operating temperature range (3) Min 8.4 14 16 8 6 39 38 Typ 9.4 16 18 -0.035 12 12 40 39 -0.01 39 38 35 32 9 2.4 5.5 350 Max 10.4 Unit GHz dB dB dB/C dB dB dBm dBm dB/C dBm dBm % % V A V Ohm C 38 37 30 27 -30 +80 ...
Description	X-band GaInP HBT High Power Amplifier
File Size	156.54K / 7 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1490 BFR180W
OCR Text	...R 180W RDs Q62702-F1490 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...8GHz VCE = Parameter 15 dB 13 10V 5V 3V 2V G 15 14 G 12 11 10 13 12 11 10 9 8 1V ...
Description	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) From old datasheet system
File Size	56.55K / 7 Page	View it Online	Download Datasheet

For 3.8ghz Found Datasheets File :: 971 Search Time::1.375ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |