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320 400 Datasheet PDF File

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				Mitsubishi Electric Corporation
Part No.	CR12AM-12 CR12AM-8
OCR Text	...f-state voltage class 8 400 500 320 400 320 12 600 720 480 600 480 type name voltage class 10.5 max 4.5 2.5 2.5 0.8 1.0 f 3.6?.2 1.3 0.5 2.6 12.5 min 3.8 max 16 max 7.0 3.2?.2 4.5 23 1 4 * * measurement point of case temperature outline...
Description	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
File Size	78.93K / 6 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK4002DPP-M0 RJK4002DPP-M0T2 RJK4002DPP-M012 RJK4002DPP-M0-15
OCR Text	...ge qgd ? 3.4 ? nc v dd = 320 v v ds = 100 v i d = 3 a body-drain diode forward voltage v df ? 0.9 1.5 v i f = 3 a, v gs = 0...400 8 200 4 2 468 10 0 10 1 v gs = 0 f = 1 mhz tc = 25c ciss coss crss capacitance c (pf) drai...
Description	400V - 3A - MOS FET High Speed Power Switching
File Size	96.91K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK4002DPH-E0 RJK4002DPH-E0T2
OCR Text	...ge qgd ? 3.4 ? nc v dd = 320 v v gs = 10 v i d = 3 a body-drain diode forward voltage v df ? 0.9 1.5 v i f = 3 a, v gs = 0 ...400 8 200 0 4 246810 0 gate charge qg (nc) drain to source voltage v ds (v) gate to sourc...
Description	400V - 3A - MOS FET High Speed Power Switching
File Size	95.12K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK4002DPD RJK4002DPD-00J2 RJK4002DPD-15
OCR Text	...rge qg ? 6.0 ? nc v dd = 320 v v gs = 10 v i d = 3 a gate to source charge qgs ? 1.2 ? nc gate to drain charge qgd ? 3....400 8 200 0 4 246810 0 gate charge qg (nc) drain to source voltage v ds (v) gate to sourc...
Description	400V - 3A - MOS FET High Speed Power Switching
File Size	80.99K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK4002DJE RJK4002DJE-00Z0 RJK4002DJE-15
OCR Text	...ge qgd ? 3.4 ? nc v dd = 320 v v ds = 100 v i d = 3 a body-drain diode forward voltage v df ? 0.9 1.5 v i f = 3 a, v gs = 0...400 v), high voltage may be supplied. therefore, please be sure to confirm about electr ic discharg...
Description	400V - 3A - MOS FET High Speed Power Switching
File Size	91.55K / 7 Page	View it Online	Download Datasheet

				OPTEK Technologies
Part No.	OPB870 OPB872 OPB870-14 OPB871
OCR Text	...l parameter a (lead spacing = 0.320?) 1 = electrical parameter b (lead spacing = 0.320?) 2 = electrical parameter c (lead spacing = 0...400 400 - - - - - - a v ce = 5.0 v, i f = 10.0 ma v ce = 5.0 v, i f = 10.0 ma, t...
Description	High Reliability Slotted Optical Switch
File Size	231.17K / 6 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	FD200R12KE3
OCR Text	...aracteristic (typical) 400 360 320 280 240 IC [A] 200 160 120 80 40 0 0,0 0,5 1,0 1,5 VCE [V] 2,0 Tvj = 25C Tvj = 125C 2,5 3,0 3,5 Ausgangskennlinienfeld (typisch) output characteristic (typical) 400 360 320 280 240 IC [A] 20...
Description	Technische Information / technical information
File Size	168.59K / 9 Page	View it Online	Download Datasheet

				Vishay Semiconductors
Part No.	SFH6186-3 SFH618A-4X001
OCR Text	...%, dip-4 sfh618a-4 ctr 160 % to 320 %, dip-4 sfh618a-5 ctr 250 % to 500 %, dip-4 sfh6186-2 ctr 63 % to 125 %, smd-4 sfh6186-3 ctr 100 % to 2...400 mil (option 6) sfh618a-3x007 ctr 100 % to 200 %, smd-4 (option 7) sfh618a-4x006 ctr 160 % to 320...
Description	1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
File Size	134.48K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHF7310SE
OCR Text	...v dss drain-to-source voltage 320 320 v applied drain-to-source voltage during gamma-dot i pp a peak radiation induced photo-curre...400 v ni 28 1 x 10 5 ~35 320 -5 radiation performance of rad hard hexfets irhf7310se device radiatio...
Description	N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 沟道单事件效Rad Hard HEXFET技术晶体管)
File Size	36.02K / 4 Page	View it Online	Download Datasheet

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