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90ns. Datasheet PDF File

For 90ns. Found Datasheets File :: 1269 Search Time::2.406ms
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				Eon Silicon Solution
Part No.	EN27LV010 EN27LV010B
OCR Text	...features read access time : - 90ns, - 120ns, - 150ns, -200ns single +3.3v power supply -regulated power supply 3.0v - 3.6v (en27lv010 ) -unregulated power supply 2.7v - 3.6v ( en27lv010b for battery operated systems) programmi...
Description	1Megabit Low Voltage EPROM (128K x 8)
File Size	83.43K / 12 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	M74DW66500B
OCR Text	...age FBGA ACCESS TIME: 70, 90ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE - Manufacturer Code: 0020h - Device Code: 227Eh + 2202h + 2201h LFBGA73 (ZA) 8 x 11.6mm EACH FLASH MEMORY ASYNCHRONOUS PAGE READ MODE DataSheet4U.com - Pag...
Description	2x 64Mbit Flash Memory and 32Mbit Pseudo SRAM
File Size	370.86K / 19 Page	View it Online	Download Datasheet

				Hanbit Electronics Co.,Ltd
Part No.	HMF1M32M2VB-120 HMF1M32F2VB-70 HMF1M32M2VB-90 HMF1M32M2VB-80
OCR Text	... Timing 70ns access 80ns access 90ns access 120ns access w Packages 80-pin SMM F -70 -80 -90 -120 MARKING PIN ASSIGNMENT P2 PIN 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Symbol Vcc DQ15 DQ7 DQ14 DQ6 DQ13 Vss DQ5 DQ12 D...
Description	Flash-ROM Module 4MByte (1Mx32Bit), 80Pin-SMM, 3.3V Design
File Size	412.42K / 12 Page	View it Online	Download Datasheet

				NanoAmp Solutions
Part No.	EM28C1602C3FL
OCR Text	... access time Flash access time: 90ns @ 2.7V F_VCC SRAM access time: 85ns @ 2.7V S_VCC Low power consumption Enhanced WRITE/ERASE suspend option Read/Write SRAM during program/erase of Flash 128-bit chip OTP protection register for security ...
Description	Flash and SRAM Combo Memory
File Size	415.75K / 34 Page	View it Online	Download Datasheet

				Macronix International Co., Ltd. PROM
Part No.	MX29SL800CTXHC-90 MX29SL800CTXHC-90G MX29SL800CBXHC-90G MX29SL800CTXBC-90G MX29SL800CTTC-90 MX29SL800CTTC-90G MX29SL800CTTI-90 MX29SL800CTTI-90G MX29SL800CBTC-90 MX29SL800CBTI-90G MX29SL800CBXEC-90G MX29SL800CBXHI-90 MX29SL800CBXBI-90 MX29SL800CBXBC-90G MX29SL800CBXHI-90G MX29SL800CBXEI-90G MX29SL800CBXBI-90G 29SL800CB-90
OCR Text	...m operation * Fast access time: 90ns * Low power consumption - 12mA maximum active current (10MHz) - 1uA typical standby current * Command register architecture - Byte/word Programming (12us/18us typical) - Sector Erase (Sector structure 16...
Description	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY 800万位[1Mx8/512K x16] CMOS单电压仅1.8V的闪
File Size	758.23K / 64 Page	View it Online	Download Datasheet

				优先(苏州)半导体有限公 Excel Semiconductor Inc...
Part No.	ES29F160EB-12TG ES29F400EB-12TG ES29F640EB-12TG ES29F800EB-12TG ES29F320EB-12TG ES29LV640DB-12TG
OCR Text	...RFORMANCE * Read access time - 90ns/120n for normal Vcc range ( 2.7V - 3.6V ) - 70ns for regulated Vcc range ( 3.0V - 3.6V ) * Program and erase time - Program time : 6us/byte, 8us/word ( typical ) - Sector erase time : 0.7sec/sector ( typ...
Description	16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
File Size	715.65K / 54 Page	View it Online	Download Datasheet

				优先(苏州)半导体有限公
Part No.	ES29DL160EB-12TG ES29DL320ET-80TG ES29DL640ET-80TG ES29DS160ET-80TG ES29DL160FT-80TG ES29DL320FT-80TG ES29DL400FT-80TG ES29DL640FT-80TG ES29DL800FT-80TG ES29BDS160DB-12TG ES29BDS160EB-12TG ES29BDS320FB-12TG ES29BDS400FT-80TG ES29BDS800FT-80TG ES29BDS640FT-80TG ES29BDS320ET-80TG ES29BDS400EB-12TG ES29BDS320DB-12TG ES29BDS320FT-80TG ES29BDS640ET-80TG ES29BDS320EB-12TG ES29BDS160FB-12TG -ES29BDS160EB-12TG -ES29DL320FT-80TG
OCR Text	...RFORMANCE * Read access time - 90ns/120n for normal Vcc range ( 2.7V - 3.6V ) - 70ns for regulated Vcc range ( 3.0V - 3.6V ) * Program and erase time - Program time : 6us/byte, 8us/word ( typical ) - Sector erase time : 0.7sec/sector ( typ...
Description	16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
File Size	727.12K / 54 Page	View it Online	Download Datasheet

				N.A. ETC
Part No.	ES29LV800D ES29DL160D ES29F320D ES29F400D ES29DL640D ES29LV320 ES29LV640D ES29F160D ES29F800D ES29DS640D ES29BDS800D ES29BDS640D ES29BDS400D ES29BDS320D ES29BDS160D ES29DL320D ES29DS160D ES29LV400D ES29LV160D ES29LV320DT-80RTG
OCR Text	...RFORMANCE * Read access time - 90ns/120n for normal Vcc range ( 2.7V - 3.6V ) - 80ns for regulated Vcc range ( 3.0V - 3.6V ) * Program and erase time - Program time : 9us/byte, 11us/word ( typical ) - Accelerated program time : 8us/word ( ...
Description	32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
File Size	648.54K / 58 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	HA2-2541_883
OCR Text	...883. These features, along with 90ns settling time to 0.1%, make this product an excellent choice for high speed data acquisition systems. Features * This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under th...
Description	Wideband, Fast Settling, Unity Gain Stable, Operational Amplifier
File Size	32.59K / 5 Page	View it Online	Download Datasheet

For 90ns. Found Datasheets File :: 1269 Search Time::2.406ms
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