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    DS1486 DS1486-150 DS1486-120 DS1486P-120 DS1486P DS1486P-150 DS9034PCX

DALLAS[Dallas Semiconducotr]
DALLAS[Dallas Semiconductor]
MAXIM - Dallas Semiconductor
Part No. DS1486 DS1486-150 DS1486-120 DS1486P-120 DS1486P DS1486P-150 DS9034PCX
OCR Text ...r which are all accessible in a bytewide format. The DS1486 contains a lithium energy source and a quartz crystal which eliminate the need for any external circuitry. Data contained within 128K by 8-bit memory and the timekeeping registers ...
Description RAMified Watchdog Timekeeper

File Size 247.03K  /  17 Page

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    HY5DU281622DLT HY5DU281622DLT-X HY5DU281622DT HY5DU281622DT-X HY5DU28822DLT HY5DU28822DLT-X HY5DU28822DT HY5DU28822DT-X

Hynix Semiconductor
Part No. HY5DU281622DLT HY5DU281622DLT-X HY5DU281622DT HY5DU281622DT-X HY5DU28822DLT HY5DU28822DLT-X HY5DU28822DT HY5DU28822DT-X HY5DU28422DLT HY5DU28422DLT-X HY5DU28422DT HY5DU28422DT-X HY5DU288DT-J HY5DU281622DT-L HY5DU288DT-L HY5DU288DT-M HY5DU288DT-K HY5DU281622DT-D4
OCR Text ...strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) On chip DLL align DQ and DQS transition with CK transition...
Description DDR SDRAM - 128Mb
128MB-S DDR SDRAM

File Size 393.77K  /  33 Page

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    HY5DU561622ALT HY5DU561622ALT-H HY5DU561622ALT-J HY5DU561622ALT-K HY5DU561622ALT-L HY5DU561622ALT-M HY5DU561622AT HY5DU5

Hynix Semiconductor
Part No. HY5DU561622ALT HY5DU561622ALT-H HY5DU561622ALT-J HY5DU561622ALT-K HY5DU561622ALT-L HY5DU561622ALT-M HY5DU561622AT HY5DU561622AT-H HY5DU561622AT-M HY5DU561622AT-L HY5DU56822ALT HY5DU56822ALT-H HY5DU56822ALT-J HY5DU56822ALT-K HY5DU56822ALT-L HY5DU56822ALT-M HY5DU56822AT HY5DU56822AT-H HY5DU56822AT-J HY5DU56822AT-K HY5DU56822AT-L HY5DU56822AT-M HY5DU56422ALT HY5DU56422ALT-H HY5DU56422ALT-J HY5DU56422ALT-K HY5DU56422ALT-L HY5DU56422ALT-M HY5DU56422AT HY5DU56422AT-H HY5DU56422AT-J HY5DU56422AT-K HY5DU56422AT-L HY5DU56422AT-M HY5DU561622AT-J HY5DU561622AT-K
OCR Text ...strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) On chip DLL align DQ and DQS transition with CK transition...
Description DDR SDRAM - 256Mb
256M-S DDR SDRAM
256M(32Mx8) DDR Sdram

File Size 354.01K  /  36 Page

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    AT27C800-10PC AT27C800 AT27C800-10 AT27C800-12 AT27C800-15TI 27C800 AT27C800-10DC AT27C800-10DI AT27C800-10PI AT27C800-1

Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
Part No. AT27C800-10PC AT27C800 AT27C800-10 AT27C800-12 AT27C800-15TI 27C800 AT27C800-10DC AT27C800-10DI AT27C800-10PI AT27C800-10RC AT27C800-10RI AT27C800-10TC AT27C800-10TI AT27C800-12DC AT27C800-12DI AT27C800-12PC AT27C800-12PI AT27C800-12RC AT27C800-12RI AT27C800-12TC AT27C800-12TI AT27C800-15 AT27C800-15DC AT27C800-15DI AT27C800-15PC AT27C800-15PI AT27C800-15RC AT27C800-15RI AT27C800-15TC
OCR Text ...16 (word-wide), but read in the bytewide mode, then with A-1=VIL the lower eight bits of the 16 bit word are selected with A-1 =VIH the upper 8 bits of the 16-bit word are selected. In read mode, the AT27C800 typically consumes 15 mA. Stand...
Description SWTCH PLUNGR SPDT 20A SCREW TERM
8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM 512K X 16 OTPROM, 100 ns, PDIP42
Triple 2-Channel Analog Multiplexer/Demultiplexer 16-TSSOP -40 to 85 512K X 16 OTPROM, 120 ns, PDSO44
Quadruple Bilateral Analog Switch 14-SSOP -40 to 85

File Size 176.70K  /  10 Page

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    HY5DU121622CTP-4 HY5DU121622CTP-5 HY5DU121622CTP-6 HY5DU121622CTP

Hynix Semiconductor
Part No. HY5DU121622CTP-4 HY5DU121622CTP-5 HY5DU121622CTP-6 HY5DU121622CTP
OCR Text ...strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) On chip DLL align DQ and DQS transition with CK transition...
Description 512Mb(32Mx16) GDDR SDRAM

File Size 223.18K  /  29 Page

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    HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K HY5DU561622DLTP-X HY5DU561622DTP-K HY5DU561622DTP-L HY5DU561622DTP-M HY

HYNIX[Hynix Semiconductor]
Part No. HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K HY5DU561622DLTP-X HY5DU561622DTP-K HY5DU561622DTP-L HY5DU561622DTP-M HY5DU561622DLTP-L HY5DU561622DTP-J HY5DU561622DTP-X HY5DU56422DLTP HY5DU56422DLTP-H HY5DU56422DLTP-J HY5DU56422DLTP-K HY5DU56422DLTP-L HY5DU56422DLTP-M HY5DU56422DLTP-X HY5DU56422DTP HY5DU56422DTP-H HY5DU56422DTP-J HY5DU56422DTP-K HY5DU56422DTP-L HY5DU56422DTP-M HY5DU56422DTP-X HY5DU56822DLTP HY5DU56822DLTP-H HY5DU56822DLTP-J HY5DU56822DLTP-K HY5DU56822DLTP-L HY5DU56822DLTP-M HY5DU56822DLTP-X HY5DU56822DTP HY5DU56822DTP-H HY5DU56822DTP-J HY5DU56822DTP-K HY5DU56822DTP-M HY5DU56822DTP-X HY5DU561622DLTP-H HY5DU561622DLTP-J HY5DU561622DLTP-M HY5DU561622DTP-H HY5DU56822DTP-L HY5DU561622DLT-J
OCR Text ...strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) On chip DLL align DQ and DQS transition with CK transition...
Description DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)

File Size 392.03K  /  37 Page

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    HY5DU561622DLT HY5DU561622DT HY5DU56422DLT HY5DU56422DT HY5DU56822DT HY5DU56822DLT HY5DU56422DLT-J HY5DU56822DLT-J HY5DU

Hynix Semiconductor
Part No. HY5DU561622DLT HY5DU561622DT HY5DU56422DLT HY5DU56422DT HY5DU56822DT HY5DU56822DLT HY5DU56422DLT-J HY5DU56822DLT-J HY5DU561622DLT-H
OCR Text ...strobe (DQS) x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O Data outputs on DQS edges when read (edged DQ) Data inputs on DQS centers when write (centered DQ) On chip DLL align DQ and DQS transition with CK transition...
Description DDR SDRAM - 256Mb
256Mb DDR SDRAM

File Size 216.31K  /  29 Page

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    INTEL[Intel Corporation]
Part No. AB28F200BX-T90 AB28F200BX-B90 A28F200BX-T
OCR Text ...itten through DQ 0 7 During the bytewide mode DQ 8 14 are tri-stated and DQ15 A b 1 becomes the lowest order address pin When the BYTE pin is at a logic high the device is in the word-wide mode (x16) and data is read and written through DQ ...
Description 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY

File Size 448.99K  /  33 Page

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    DS1225 DS1225Y DS1225Y-170-IND DS1225Y-150 DS1225Y-150-IND DS1225Y-200-IND DS1225Y-200 DS1225Y-170

DALLAS[Dallas Semiconducotr]
MAXIM - Dallas Semiconductor
Part No. DS1225 DS1225Y DS1225Y-170-IND DS1225Y-150 DS1225Y-150-IND DS1225Y-200-IND DS1225Y-200 DS1225Y-170
OCR Text ...ectly conforming to the popular bytewide 28-pin DIP standard. The DS1225Y also matches the pinout of the 2764 EPROM or the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycle...
Description Low-Noise, High-Speed, 16-Bit Accurate CMOS Operational Amplifier 8-SOIC -40 to 125
64K Nonvolatile SRAM

File Size 81.15K  /  8 Page

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    M28LV16 M28C16-200K1T M28C16-200K6T M28C16-200MS1T M28C16-200MS6T M28C16-200N1T M28C16-200N6T M28C16-200P6T M28C16-250K1

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. M28LV16 M28C16-200K1T M28C16-200K6T M28C16-200MS1T M28C16-200MS6T M28C16-200N1T M28C16-200N6T M28C16-200P6T M28C16-250K1T M28C16-250K6T M28C16-250MS1T M28C16-250MS6T M28C16-250N1T M28C16-250N6T M28C16-250P1T M28C16-250P6T M28C16-300K1T M28C16-300K6T M28C16-300MS1T M28C16-300MS6T M28C16-300N1T M28C16-300N6T M28C16-300P1T M28C16-300P6T M28C16A M28C16-200P1T -M28C16-250P1T
OCR Text ...ention >40 Years JEDEC APPROVED bytewide PIN OUT SOFTWARE DATA PROTECTION M28LV16 is replaced by the products described on the document M28C16A DESCRIPTION The M28LV16 is a 2K x 8 low power Parallel EEPROM fabricatedwith SGS-THOMSON proprie...
Description 16K (2K x 8) LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION 16K的(2K × 8)低电压并联EEPROM,带有软件数据保

File Size 122.24K  /  17 Page

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