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For ch-tc Found Datasheets File :: 8482    Search Time::2.125ms    
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    SI4500BDY SI4500BDY-E3 SI4500BDY-T1 SI4500BDY-T1-E3

Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. SI4500BDY SI4500BDY-E3 SI4500BDY-T1 SI4500BDY-T1-E3
OCR Text ... = 0 V IS = -2.1 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -20 0.016 0.048 0...TC = 125_C 25_C -55_C 0.5 1.0 1.5 2.0 2.5 3.0 1.5 V VGS - Gate-to-Source Voltage (V) On-Res...
Description GT 4C 4#8 PIN RECP WALL RM
Complementary MOSFET Half-Bridge (N- and P-Channel)

File Size 75.84K  /  8 Page

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    SI4500DY

Vishay Siliconix
Part No. SI4500DY
OCR Text ... = 0 V IS = -1.7 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -20 0.022 0.058 0...TC = 125_C 6 25_C -55_C 0 6 1.5 V 0 0 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0 ...
Description Complementary MOSFET Half-Bridge (N- and P-Channel)

File Size 105.60K  /  7 Page

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    2SK2098-01MR 2SK2098

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
Part No. 2SK2098-01MR 2SK2098
OCR Text ...DS V DGR ID I D(puls) V GS PD T ch T stg Rating 150 150 20 80 20 50 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate T...
Description N-channel MOS-FET 20 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 189.27K  /  2 Page

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    2SK2099-01L 2SK2099-01S

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
Part No. 2SK2099-01L 2SK2099-01S
OCR Text ...DS V DGR ID I D(puls) V GS PD T ch T stg Rating 250 250 6 24 30 20 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Th...
Description N-channel MOS-FET 6 A, 250 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 214.11K  /  2 Page

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    2SK2898-01

FUJI[Fuji Electric]
Part No. 2SK2898-01
OCR Text ... DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 100 400 20 1268.3 150 150 -55 ~ +150 L=0.169mH,Vcc=24V Unit V A A V mJ* W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage G...
Description N-channel MOS-FET

File Size 256.31K  /  3 Page

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    2SK3192

PANASONIC[Panasonic Semiconductor]
Part No. 2SK3192
OCR Text ...rain charge Thermal resistance (ch-c) Thermal resistance (ch-a) Symbol VDSF trr Qrr Qg Qgs Qgd Rth(ch-c) Rth(ch-a) Conditions IDR = 30 A, VG...TC = 25C IDP ID 10 DC 1 ms 10 ms 1 100 ms t = 100 s PD Ta 120 (1) (1) TC = Ta (2) Without heat ...
Description Silicon N-channel power MOSFET

File Size 83.82K  /  4 Page

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    2SK3408

EIC discrete Semiconductors
NEC[NEC]
Part No. 2SK3408
OCR Text ...SISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W Single Pulse Without Board 100 Mounted on 250 mm2 x 35 m Copper Pad Connected to Drain Electrode in 2500 mm2 x 1.6 mm FR-4 Board 10 1 0.001 0.01 ...
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 60.29K  /  8 Page

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    2SK3608-01L 2SK3608-S 2SK3608-SJ 2SK3608

FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. 2SK3608-01L 2SK3608-S 2SK3608-SJ 2SK3608
OCR Text ...m Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.5 75.0 Unit...Tc) 70 300 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):...
Description    N-CHANNEL SILICON POWER MOSFET
N-CHANNEL SILICON POWER MOSFET 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 120.72K  /  4 Page

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    ACT7005 ACT7006 7006 7005

AEROFLEX[Aeroflex Circuit Technology]
Part No. ACT7005 ACT7006 7006 7005
OCR Text ...ceiver Differential Input (DATA CH A/B / DATA CH A/B) Receiver Input Voltage (DATA CH A/B or DATA CH A/B - Common Mode) Operating Case Temperature Range (TC) Transmission Duty Cycle at TC = +125C Min -0.3 -0.3 -10 -5 -55 - Max 7.0 7...
Description ACT7005/7006 Single Package Solution Dual Transceiver, Protocol, Subsystem

File Size 220.17K  /  29 Page

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    APT50GF60BR

ADPOW[Advanced Power Technology]
Part No. APT50GF60BR
OCR Text ...MP DRIVER* tor e uc arg Ind -Ch e Pr 10% D.U.T. V CE(SAT) Figure 16, Switching Loss Test Circuit and Waveforms 2 VCE(off) 90% VGE(on) V CC 0.1 F 1KV 50 F 600V RL = 2 .66 VCES I C2 D.U.T. 10% 1 VGE(off) t...
Description Fast IGBT 600V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 80.83K  /  5 Page

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