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channel p Datasheet PDF File

For channel p Found Datasheets File :: 68282 Search Time::1.344ms
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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	...gic Level Devices Fig 14. For N-channel HEXFETS IRF3710S/L D2pak package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (....
Description	power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710pBF
OCR Text	...Reverse polarity of D.U.T for p-channel Driver Gate Drive p.W. period D= p.W. period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] ...
Description	power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-channel HEXFET power MOSFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711S
OCR Text	...gic Level Devices Fig 14. For N-channel HEXFET(R) power MOSFETs www.irf.com 7 IRF3711/3711S/3711L TO-220AB package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3....
Description	power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	...covery dv/dt Test Circuit for N-channel HEXFET(R) power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge...p + poutput drive ploss = Irms x Rds(on) + ( g x Vg x f ) Q ( 2 ) ploss = pconduct...
Description	HEXFETpower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	...emperature l Fast Switching l p-channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.02 G ID = -74A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi...
Description	power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single p-channel HEXFET power MOSFET in a D2-pak package -55V Single p-channel HEXFET power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905pBF
OCR Text	...emperature l Fast Switching l p-channel l Fully Avalanche Rated Description l l D VDSS = -55V G S RDS(on) = 0.02 ID = -74A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve...
Description	power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single p-channel HEXFET power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...emperature l Fast Switching l p-channel l Fully Avalanche Rated Description l l D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achi...
Description	power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...ng Temperature Fast Switching p-channel Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ex...
Description	power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	...r Corporation IRF530A N-channel pOWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS BV/ T...p l e T s .5 us et 08 . 10 . 12 . 14 . 16 . 18 . 20 . 22 . 1 5 oC 7 2 oC 5 1 -1 0 04 . 06 . ID...
Description	N-channel pOWER MOSFET Advanced power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	IRF530FI IRF530 3003
OCR Text	channel ENHANCEMENT MODE pOWER MOS TRANSISTOR TYpE IRF530 IRF530F I s s s s s s s s V DSS 100 V 100 V R DS(on) < 0.16 < 0.16 ...p tot Viso T s tg Tj March 1999 parameter IRF530 Drain-source Voltage (V GS = 0) Drain- gate Voltage...
Description	From old datasheet system N - channel ENHANCEMENT MODE pOWER MOS TRANSISTOR
File Size	46.69K / 6 Page	View it Online	Download Datasheet

For channel p Found Datasheets File :: 68282 Search Time::1.344ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |