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HYNIX SEMICONDUCTOR INC
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Part No. |
HYMP512U64CP8-S6
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OCR Text |
...drams # of drams # of row/bank/column address refresh method 256mb 32m x 64 1 32mb x 16 4 13(a0~a12)/2(ba0~ba1)/10(a0~a9) 8k / 64ms 512mb 64m x 64 1 64mb x 8 8 13(a0~a12)/2(ba0~ba1)/10(a0~a9) 8k / 64ms 512mb 64m x 72 1 64mb x 8 9 13(a0~a1... |
Description |
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA240
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File Size |
571.57K /
30 Page |
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Part No. |
MT48LC16M8A2P-6ALG MT48LC16M8A2P-6AG
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OCR Text |
...? internal pipelined operation; column address can be changed every clock cycle ? internal banks for hiding row access/precharge ? programmable burst lengths (bl) : 1, 2, 4, 8, or full page ? auto precharge, includes conc urrent auto prec... |
Description |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
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File Size |
2,156.63K /
74 Page |
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it Online |
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Nanya Techology
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Part No. |
NT5DS32M4AT
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OCR Text |
...lect the bank and the starting column location for the burst access. the ddr sdram provides for programmable read or write burst lengths of 2, 4 or 8 locations. an auto precharge func- tion may be enabled to provide a self-timed row prech... |
Description |
(NT5DS16M8AT / NT5DS32M4AT) 128Mb DDR SDRAM
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File Size |
1,559.58K /
76 Page |
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it Online |
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Part No. |
KMMR18R8GAC1-SK8
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OCR Text |
... buses with independent row and column control yield over 95% bus efficiency. the rdram's 32-banks architecture supports up to four simultaneous transactions per device. features h igh speed 800, 711 and 600mhz rdram storage 184 edge c... |
Description |
128M X 18 RAMBUS MODULE, DMA184
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File Size |
207.67K /
10 Page |
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it Online |
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Mosel Vitelic Corp
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Part No. |
V54C3128404VT
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OCR Text |
...olled precharge command random column address every clk (1-n rule) power down mode auto refresh and self refresh refresh interval: 4096 cycles/64 ms available in 60-ball soc bga and 54 pin tsopii lvttl interface single +3.3 v 0.3 ... |
Description |
128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
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File Size |
588.86K /
49 Page |
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it Online |
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Price and Availability
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