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P80NF55 FDS8958B WNM2024 SA9103C 4HCT3 A1500 00150 ISL782
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For high low Found Datasheets File :: 346207    Search Time::3.468ms    
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    Micron Technology, Inc.
Part No. MT55L512Y36P MT55L512Y32P MT55L1MY18P
OCR Text ...am 16mb zbt ? sram features ? high frequency and 100 percent bus utilization ? fast cycle times: 6ns, 7.5ns, and 10ns ? single +3.3v 5% or...low ? single r/w# (read/write) control pin ? cke# pin to enable clock and suspend operations ? three...
Description 16Mb: 512K x 36,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 32,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)

File Size 447.11K  /  34 Page

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    Micron Technology, Inc.
Part No. MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F
OCR Text ...nce 16mb zbt ? sram features ? high frequency and 100 percent bus utilization  fast cycle times: 10ns, 11ns and 12ns  single +3.3v 5%, or...low  single r/w# (read/write) control pin  cke# pin to enable clock and suspend operations  three...
Description 16Mb: 512K x 32,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)

File Size 513.55K  /  32 Page

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    MLESD24B-0603

Micro Commercial Components
Part No. MLESD24B-0603
OCR Text high speed data lines to inches mm dim min max min max note a . 059 . 067 1.50 1.70 b . 0 27 . 0 3 6 0.70 0.90 c . 0 1 3 . ...low capacitance ? very low leakage current ? fast response time ? bi-directional esd protection ...
Description Multilayer Polymer ESD Suppressor

File Size 300.92K  /  4 Page

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    2SC5006 2SC5006-T1 2SC5006NE85619 2SC5006-T1-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5006 2SC5006-T1 2SC5006NE85619 2SC5006-T1-T2
OCR Text ... to UHF band. low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietar...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/µDFN, Single/Dual low-Voltage, low-Power µP Reset Circuits
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

File Size 60.49K  /  10 Page

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    2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2

http://
NEC[NEC]
NEC Corp.
Part No. 2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2
OCR Text ... to UHF band. low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietar...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Discrete

File Size 62.00K  /  10 Page

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    2SC5008 2SC5008-T1 2SC5008NE68019 2SC5008-T1-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5008 2SC5008-T1 2SC5008NE68019 2SC5008-T1-T2
OCR Text ...nd to L band. low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietar...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/µDFN, Single/Dual low-Voltage, low-Power µP Reset Circuits

File Size 59.73K  /  10 Page

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    2SC5009 2SC5009-T1 2SC5009-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text ...nd to L band. low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

File Size 57.57K  /  10 Page

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