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TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK2613
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OCR Text |
...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 1000 1000 30 8 24 150 910 8 15 150 -55~150 Unit V V V A W mJ A mJ C C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURSE
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2... |
Description |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)
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File Size |
220.85K /
6 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK3085
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OCR Text |
...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 600 600 30 3.5 14 75 227 3.5 7.5 150 -55~150 Unit V V V A W mJ A mJ C C
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalan... |
Description |
Chopper Regulator, DC-DC Converter and Motor Drive Applications
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File Size |
203.35K /
6 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK3417
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OCR Text |
...ol VDSS VDGR VGSS ID IDP PD EAR iar EAR Tch Tstg Rating 500 500 30 5 20 50 180 5 5 150 -55~150 Unit V V V A W mJ A mJ C C
Pulse (Note 1)
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repet... |
Description |
Switching Regulator Applications
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File Size |
249.60K /
7 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK3797
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OCR Text |
...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 600 600 30 13 52 50 1033 13 5.0 150 -55~150 A W mJ A mJ C C
1: Gate 2: Drain 3: Source
Unit V V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25C) Single pulse av... |
Description |
Silicon N-Channel MOS Type
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File Size |
216.89K /
6 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK3798
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OCR Text |
...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 900 900 30 4 12 40 345 4 4.0 150 -55~150 A W mJ A mJ C C
1: Gate 2: Drain 3: Source
Unit V V V
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25C) Single pulse avala... |
Description |
Silicon N Channel MOS Type Switching Regulator Applications
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File Size |
219.08K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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