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Infineon Technologies Corporation
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| Part No. |
SGW10N60 SGB10N60
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| OCR Text |
...atings Parameter
VCE 600V
IC 10A
VCE(sat) 2.2V
Tj 150C
Package TO-220AB TO-263AB TO-247AC
Ordering Code Q67041-A4710-A2 Q6...60W
10A
40W
20W
5A
0W 25C
50C
75C
100C
125C
0A 25C
50C
75C
10... |
| Description |
Fast S-igbt in Npt-technology
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| File Size |
302.33K /
12 Page |
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it Online |
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Infineon
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| Part No. |
G15N60
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| OCR Text |
... Avalanche energy, single pulse IC = 15 A, VCC = 50 V, RGE = 25 , start at Tj = 25C Short circuit withstand time Power dissipation TC = 25C...60W 40W 20W 0W 25C
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
25A 20A 15A 10A 5A 0A 25C
... |
| Description |
Fast IGBT
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| File Size |
499.21K /
11 Page |
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it Online |
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Infineon
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| Part No. |
SGW02N120
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| OCR Text |
... Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25, start at Tj = 25C Short circuit withstand time Power dissipation TC = 25C Oper...60W
6A
50W
Ptot, POWER DISSIPATION
40W
IC, COLLECTOR CURRENT
50C 75C 100C 125C
5A 4... |
| Description |
IGBTs & DuoPacks - 2A 1200V TO247AC IGBT
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| File Size |
376.51K /
11 Page |
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it Online |
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Infineon Technologies
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| Part No. |
SKP15N60
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| OCR Text |
...-55...+150 C
1)
VCE 600V
IC 15A
VCE(sat) 2.3V
Tj 150C
Package TO-220AB TO-263AB TO-247AC
Ordering Code Q67040-S4251 Q6704...60W 40W 20W 0W 25C
IC, COLLECTOR CURRENT
50C 75C 100C 125C
Ptot, POWER DISSIPATION
25A 20A... |
| Description |
Fast IGBT in NPT-technology with soft / fast recovery anti-parallel EmCon diode
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| File Size |
488.22K /
14 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SB1297
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| OCR Text |
...ature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25C)
Ratings -120 -120 -5 -1 - 0.5 1 150 -55 ~ +150 Unit V V V A A W C C
123 2.540.15...60W output amplifier.
0.70.1
0.70.2
8.00.2
s Features
0.45 -0.1
+0.15
2.30.2
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| Description |
Silicon PNP epitaxial planer type(For low-frequency output amplification)
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| File Size |
36.81K /
2 Page |
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it Online |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
BUL53BSMD
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| OCR Text |
...herwise stated)
VCBO VCEO VEBO IC IC(PK) IB PD R? Tj Tstg Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Volt...60W 3.0C/W 200C -55 to +200C
Prelim. 7/00
Semelab plc.
BUL53BSMD
ELECTRICAL CHARACTERISTIC... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
20.29K /
2 Page |
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it Online |
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Price and Availability
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