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  igbt-die Datasheet PDF File

For igbt-die Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    SGL160N60UFD SGL160N60UFDTU

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. SGL160N60UFD SGL160N60UFDTU
Description 240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 160 A, 600 V, N-CHANNEL IGBT, TO-264AA
Ultrafast IGBT
Discrete, High Performance IGBT with Diode

File Size 658.96K  /  8 Page

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    International Rectifier, Corp.
TE Connectivity, Ltd.
Kingbright, Corp.
NIC Components, Corp.
Part No. 7703403UA 7703401YA 77034042A 7703404MA 7703404NA 7703404TA 7703404UA 7703404XA 7703404YA 7703404ZA 5962-7703404VXA 5962-7703404VYA 7703401UA 7703408YA 7703405NA 7703401MA 7703405TA
Description Negative Adjustable Voltage Regulator
15 HZ, 90DB REJECTION BTW 49 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, TUBE
15 HZ, 90DB REJECTION BTW 49 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, T/R
15 HZ, 90DB REJECTION BTW 59 & 61 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, T/R
60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, TUBE
60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-SOIC 150mil, TUBE
60 HZ, 120DB REJECTION AT 240 HZ (PRODUCT DIE), -40C to 125C, 8-MSOP, T/R
Low-cost volatile, Digital Potentiometer, -40C to 125C, 8-SOIC 150mil, TUBE
PRODUCT TO FREQUENCY CONVERTER WHICH IS USED TO POWER METERING APLICATIONS, -40C to 85C, 24-SSOP 208mil, TUBE 积极可调电压稳压
18 BIT DEL-SIG A/D CONVERTER, -40C to 125C, 6-SOT-23, T/R 积极可调电压稳压
Positive Adjustable Voltage Regulator 积极可调电压稳压
ENERGY METER IC, GAIN 1:16, 500:1 DYNAMIC RANGE, -40C to 85C, 24-SSOP 208mil, T/R 积极可调电压稳压

File Size 1,150.15K  /  44 Page

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    IXYS[IXYS Corporation]
Part No. IXSM45N100 IXSH45N100
Description 1000V IGBT with diode
IGBT Discretes: Low Saturation Voltage Types
Low VCE(sat) IGBT - Short Circuit SOA Capability

File Size 102.32K  /  4 Page

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    IXYS[IXYS Corporation]
IXYS, Corp.
Part No. IXSH24N60A IXSH24N60
Description IGBT Discretes: Low Saturation Voltage Types
HiPerFAST IGBT(VCES00V,VCE(sat).2VB>HiPerFAST绝缘栅双极晶体管)
HiPerFAST IGBT(VCES00V,VCE(sat).7V的HiPerFAST绝缘栅双极晶体管) 48 A, 600 V, N-CHANNEL IGBT, TO-247AD

File Size 34.65K  /  2 Page

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    BUP306D Q67040-A4222-A2 BUP306-D

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BUP306D Q67040-A4222-A2 BUP306-D
Description IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 23 A, 1200 V, N-CHANNEL IGBT, TO-218
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...

File Size 220.31K  /  8 Page

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    IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N120CD1

IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXGH15N120BD1 IXGT15N120BD1 IXGH15N120CD1 IXGT15N120CD1
Description Low VCE(sat) IGBT with Diode High Speed IGBT with Diode 30 A, 1200 V, N-CHANNEL IGBT, TO-247AD

File Size 54.92K  /  2 Page

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    http://
IXYS[IXYS Corporation]
Part No. IXGT60N60 IXGH60N60 IXGK60N60
Description Ultra-Low VCE(sat) IGBT
IGBT Discretes: Low Saturation Voltage Types Single IGBT

File Size 94.58K  /  4 Page

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    BUP202 Q67078-A4401-A2 BUP202SMD

Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BUP202 Q67078-A4401-A2 BUP202SMD
Description IGBT Transistor
From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220

File Size 381.20K  /  7 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSM400GA120DL 400A12L C67076-A2302-A70
Description IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system

File Size 115.31K  /  9 Page

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    K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB3 K4H560438E-TC/LB3 K4H560438E-TC/LB0 K4H560438E-T

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB3 K4H560438E-TC/LB3 K4H560438E-TC/LB0 K4H560438E-TC/LA2 K4H560438E-TC/LAA K4H560838E K4H560438E-TLAA K4H560838E-TCAA K4H560838E-TLAA K4H560438E-TCAA K4H560438E-TCB3 K4H560438E-TLB3
Description DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
   DDR SDRAM 256Mb E-die (x4, x8)

File Size 216.51K  /  24 Page

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For igbt-die Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

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