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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...Avalanche Energy (mJ) VDS L DRIVER 560 BOTTOM + V - DD 420 A 0.01 280 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 140 0 25 50 75 100 125 150 175 Starting Tj, Junction Temperature ( C)...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text L HEXFET(R) Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175C Op...IF = 22A --- 1.2 1.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS =...IF = 22A --- 1.2 1.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ... VDD = 25V, starting TJ = 25C, L = 3.1mH RG = 25, IAS = 25A. (See Figure 12) To Order Previous Datasheet Index Next Data Sheet IRF1310S 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 0 I , Drain-to-Sou...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    IRF1404L IRF1404S

IRF[International Rectifier]
Part No. IRF1404L IRF1404S
OCR Text l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated Description (R) l l IRF1404S IRF1404L D ...IF = 95A --- 180 270 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated b...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)

File Size 237.30K  /  10 Page

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    IRF1404

International Rectifier
Part No. IRF1404
OCR Text l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Aval...IF = 95A --- 180 270 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated b...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)

File Size 105.33K  /  8 Page

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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ...f.com 1 1/11/01 IRF1405S/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(...IF = 101A --- 250 380 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ...e fig. 11). Starting TJ = 25C, L = 0.11mH RG = 25, IAS = 101A. (See Figure 12). ISD 101A, di/dt 210A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

File Size 114.28K  /  9 Page

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ... VDSS . R Starting TJ = 25C, L = 0.13mH RG = 25, IAS = 78A. (See Figure 12). S ISD 78A, di/dt 320A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2%. VCalculated continuous current based on maximum allowable junction ...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ... fig. 11). R Starting TJ = 25C, L = 0.13mH RG = 25, IAS = 78A. (See Figure 12). S ISD 78A, di/dt 320A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2%. U Coss eff. is a fixed capacitance that gives the same charging time ...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

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