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JST Mfg. Co., Ltd.
Renesas Electronics Corporation
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| Part No. |
NP35N04YUG-E1-AY NP35N04YUG-E2-AY
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| OCR Text |
...bs trate of 40 mm x 40 mm x 0.8 mmt *3. t ch(peak) 150 c, r g = 25 r07ds0016ej0100 rev.1.00 jul 01, 2010
np35n04yug chapter title r07ds0016ej0100 rev.1.00 page 2 of 6 jul 01, 2010 electrical characteristics (t a =... |
| Description |
35000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, HSON-8
MOS FIELD EFFECT TRANSISTOR
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| File Size |
220.03K /
8 Page |
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it Online |
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JST Mfg. Co., Ltd.
Renesas Electronics Corporation
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| Part No. |
NP75N04YUG-E1-AY NP75N04YUG-E2-AY NP75N04YUG-15
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| OCR Text |
...bs trate of 40 mm x 40 mm x 0.8 mmt *3. t ch(peak) 150 c, r g = 25 r07ds0018ej0100 rev.1.00 jul 01, 2010
np75n04yug chapter title r07ds0018ej0100 rev.1.00 page 2 of 6 jul 01, 2010 electrical characteristics (t a =... |
| Description |
75000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, HSON-8
MOS FIELD EFFECT TRANSISTOR
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| File Size |
219.47K /
8 Page |
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it Online |
Download Datasheet |
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Renesas Electronics, Corp.
Renesas Electronics Corporation
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| Part No. |
NP40N10VDF-E1-AY NP40N10PDF-E1-AY NP40N10YDF-E1-AY NP40N10YDF-E2-AY NP40N10PDF-E2-AY NP40N10VDF-E2-AY
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| OCR Text |
...bstrate of 40 mm x 40 mm x 1.6 mmt with 4% copper area (35 m) *3. t ch(start) = 25 c, v dd = 50 v, r g = 25 , l = 100 h, v gs = 20 v 0 v
np40n10ydf, np40n10vdf, np40n10pdf chapter title r07ds0361ej0100 rev.1.00 p... |
| Description |
40 A, 100 V, 0.037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 LEAD FREE, MP-3ZP, 3 PIN
40 A, 100 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, TO-263, MP-25ZP, 3 PIN
MOS FIELD EFFECT TRANSISTOR
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| File Size |
248.35K /
11 Page |
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it Online |
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Vishay Intertechnology, Inc.
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| Part No. |
UPA2210T1M-T1-AT
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| OCR Text |
...oard of 25.4 mm x 25.4 mm x 0.8 mmt remark the diode connected between the gate and source of the transistor serves as a protector aga...1 0.145 0.05 0 to 0.025 0.32 0.05 0.8 0.05 1.6 0.1 1.9 0.1 0.05 m s a 0.05 s 0.225 0.1 s a ... |
| Description |
7.2 A, 20 V, 0.029 ohm, P-CHANNEL, Si, POWER, MOSFET LEAD FREE, 1629, VSOF-8
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| File Size |
158.79K /
6 Page |
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it Online |
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Vishay Intertechnology, Inc.
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| Part No. |
UPA2210T1M-T2-AT
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| OCR Text |
...oard of 25.4 mm x 25.4 mm x 0.8 mmt remark the diode connected between the gate and source of the transistor serves as a protector aga...1 0.145 0.05 0 to 0.025 0.32 0.05 0.8 0.05 1.6 0.1 1.9 0.1 0.05 m s a 0.05 s 0.225 0.1 s a ... |
| Description |
7.2 A, 20 V, 0.029 ohm, P-CHANNEL, Si, POWER, MOSFET LEAD FREE, 1629, VSOF-8
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| File Size |
263.67K /
8 Page |
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it Online |
Download Datasheet |
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Vishay Intertechnology, Inc.
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| Part No. |
UPA2211T1M-T1-AT
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| OCR Text |
...oard of 25.4 mm x 25.4 mm x 0.8 mmt remark the diode connected between the gate and source of the transistor serves as a protector aga...1 0.145 0.05 0 to 0.025 0.32 0.05 0.8 0.05 1.6 0.1 1.9 0.1 0.05 m s a 0.05 s 0.225 0.1 s a ... |
| Description |
7.5 A, 12 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET LEAD FREE, VSOF, 8 PIN
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| File Size |
159.73K /
6 Page |
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it Online |
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Vishay Intertechnology, Inc.
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| Part No. |
UPA2550T1H-T1-AT
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| OCR Text |
...ard of 25. 4 mm x 25.4 mm x 0.8 mmt equivalent circuit (1/2) source body diode gate protection diode gate drain remark the diode connected between the gate and source of the transistor serves as a protector against esd. when ... |
| Description |
5 A, 12 V, 0.093 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET LEAD FREE, VSOF, 8 PIN
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| File Size |
259.54K /
9 Page |
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it Online |
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Vishay Intertechnology, Inc.
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| Part No. |
UPA2590T1H-T1-AT
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| OCR Text |
...ard of 25. 4 mm x 25.4 mm x 0.8 mmt equivalent circuit source body diode gate protection diode gate drain n-channel source body diode...1 a gate leakage current i gss v gs = 16 v, v ds = 0 v 10 a gate to source cut-off... |
| Description |
4.5 A, 30 V, 0.083 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET LEAD FREE, VSOF, 8 PIN
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| File Size |
328.68K /
13 Page |
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it Online |
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