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SGS Thomson Microelectronics
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Part No. |
TDA9535L
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OCR Text |
..., white to black transition 5 % os2 overshoot, black to white transition 0 % d vg low frequency gain matching (note 1) v dc = 50v, f=1mhz 5 % bw bandwidth at -3db v dc =50v, d v=20v pp 37 mhz t r rise time v dc =50v, d v=40v pp 8.5 ns t f f... |
Description |
9.5NS TRIPLE-CHANNEL, HIGH VOLTAGE VIDEO AMPLIFIER WITH VERY LOW STD-BY POWER CONSUMPTION
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File Size |
290.10K /
16 Page |
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it Online |
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SGS Thomson Microelectronics
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Part No. |
TDA9536
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OCR Text |
..., white to black transition 5 % os2 overshoot, black to white transition 1 % d vg low frequency gain matching (note 4) v dc = 50v, f=1mhz 5 % bw bandwidth at -3db v dc =50v, d v=20v pp 50 mhz t r rise time v dc =50v, d v=40v pp 7.2 ns t f f... |
Description |
7.5NS TRIPLE-CHANNEL, HIGH VOLTAGE VIDEO AMPLIFIER
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File Size |
289.51K /
15 Page |
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it Online |
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Renesas Electronics, Corp.
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Part No. |
HAF1004 HAF1004L HAF1004S
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OCR Text |
...ut down operation time note4 t os2 ?2.4?msv gs = ?5 v, v dd = ?24 v notes: 3. pulse test 4. including the junction temperature rise of the lorded condition
haf1004(l), haf1004(s) rev.5.00, apr.29.2 003, page 4 of 10 main characteri... |
Description |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.6 to 4.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 硅P通道MOS FET的电源开关系 Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.8 to 5.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 硅P通道MOS FET的电源开关系 Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.7 to 4.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 硅P通道MOS FET的电源开关系
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File Size |
111.39K /
10 Page |
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it Online |
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