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				http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4J52324QC K4J52324QC-BJ12 K4J52324QC-BC20 K4J52324QC-BJ14
OCR Text	...or masking write data ? auto & self refresh modes ? auto precharge option ? 32ms, auto refresh (8k cycle) ? 136 ball fbga ? maximum clock frequency up to 800mhz ? maximum data rate up to 1.6gbps/pin ? dll for outputs ? boundary sc...
Description	512Mbit GDDR3 SDRAM 512MB的GDDR3 SDRAM
File Size	1,253.79K / 57 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4M56323LE-MS80 K4M56323LE K4M56323LE-EC1H K4M56323LE-EC1L K4M56323LE-EC80 K4M56323LE-EE1H K4M56323LE-EE1L K4M56323LE-EE80 K4M56323LE-EL1H K4M56323LE-EL1L K4M56323LE-EL80 K4M56323LE-EN1H K4M56323LE-EN1L K4M56323LE-EN80 K4M56323LE-ER1H K4M56323LE-ER1L K4M56323LE-ER80 K4M56323LE-ES1H K4M56323LE-ES1L K4M56323LE-ES80 K4M56323LE-MC1H K4M56323LE-MC1L K4M56323LE-MC80 K4M56323LE-ME1H K4M56323LE-ME1L K4M56323LE-ME80 K4M56323LE-ML1H K4M56323LE-ML1L K4M56323LE-MN1H K4M56323LE-MN1L K4M56323LE-MN80 K4M56323LE-MR1H K4M56323LE-MR1L K4M56323LE-MR80 K4M56323LE-MS1H K4M56323LE-MS1L K4M56323LE-ML80
OCR Text	...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -EXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M56323LE is 268,435,456 bi...
Description	2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM RES 180K 5% 0603 Surface Mount Resistors Thick Film Chip Resistors
File Size	139.56K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4M563233E-N K4M563233E K4M563233E-C K4M563233E-E K4M563233E-F1H K4M563233E-F1L K4M563233E-F75 K4M563233E-F80 K4M563233E-G K4M563233E-L K4M563233E-M K4M563233E-EE800 K4M563233E-ME800
OCR Text	...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -EXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M563233E is 268,435,456 bi...
Description	2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
File Size	139.67K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-XE K4S56163LF-ZC750 K4S56163LF-ZE1L0 K4S56163LF-ZN1L0
OCR Text	...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -Z : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4S56163LF is 268,435,456 bits ...
Description	16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC 4米16 × 4银行4BOC移动SDRAM
File Size	112.21K / 12 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY5S5B2BLF-6E HY5S5B2BLF-HE HY5S5B2BLF-SE HY5S5B2BLFP-6E HY5S5B2BLFP-HE HY5S5B2BLFP-SE
OCR Text	...ion may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. The Mobile SDRAM uses an internal...Leaded Rev 1.0 / Apr. 2006 5 256Mbit (8Mx32bit) Mobile SDR Memory HY5S5B2BLF(P) Series 1...
Description	256M (8Mx32bit) Mobile SDRAM
File Size	669.63K / 54 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4M511633E-Y K4M511633E K4M511633E-C K4M511633E-F1H K4M511633E-F1L K4M511633E-F75 K4M511633E-L K4M511633E-P K4M511633E-YC1H0
OCR Text	...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded, -PXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M511633E is 536,870,912 bi...
Description	32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
File Size	110.15K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4M511533E-YPC K4M511533E K4M511533E-C K4M511533E-F1H K4M511533E-F1L K4M511533E-F75 K4M511533E-L K4M511533E-Y K4M511533E-YC K4M511533E-YP K4M511533E-YF1H0 K4M511533E-YC1L0 K4M511533E-YL1L0 K4M511533E-PF750 K4M511533E-YC750
OCR Text	...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) * DQM for masking. * Auto refresh. * ...Leaded , -PXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M511533E is 536,870,912 b...
Description	Mobile-SDRAM 移动SDRAM 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
File Size	104.22K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung Semiconductor Co., Ltd. Data Device, Corp. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF750 K4M28163PF-BG750
OCR Text	...Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) -. DS (Driver Strength) * DQM for mas...Leaded, -BXXX : Lead Free). Mobile-SDRAM GENERAL DESCRIPTION The K4M28163PF is 134,217,728 bi...
Description	2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54
File Size	111.60K / 12 Page	View it Online	Download Datasheet

				Illinois Capacitor, Inc. Illinois Capacitor, Inc...
Part No.	103PPB630K 103PPB162K 103PPB202K 103PPB102KE 103PPB162KB 473PPB630KB 474PPB630KB 333PPB102K 683PPB102K 104PPB102K 154PPB102K 332PPB102K 472PPB102K 682PPB102K 153PPB102K 223PPB102K 473PPB102K 224PPB102K 223PPB162K 223PPB202K 153PPB202K 153PPB102KB 153PPB630K 153PPB162K
OCR Text	self healing ? stable with frequency and temperature ? high dvdt ? high voltage applications ? power semiconductor circuits ?...leaded polypropylene film capacitors for pulse applications l 18 26.5 32 42.5 s 15 22...
Description	Radial leaded metallized polypropylene film capacitors for Pulse applications
File Size	518.40K / 3 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4T56043QFNBSP K4T56083QFNBSP K4T56083QF K4T56083QF-GCD5 K4T56083QF-GCE6 K4T56083QF-ZCD5 K4T56043QF K4T56043QF-GCD5 K4T56043QF-ZCD5 K4T56083QF-ZCE6
OCR Text	...ovides Precharge Power-Down and Self Refresh operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit, and for self refresh entry. CKE is asynchronous for self refresh exit....
Description	256Mb F-die DDR2 SDRAM
File Size	474.27K / 27 Page	View it Online	Download Datasheet

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