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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S21100HSR3 MRF6S21100HR3
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| OCR Text |
...c, f1 = 2135 MHz, f2 = 2145 MHz Two -Tone Measurements, 10 MHz Tone Spacing 700 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1450 mA 1200 mA 950 mA -20 -25 -30 -35 -40 -45 -50 700 mA -55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
666.08K /
15 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S19140HSR3 MRF6S19140HR3 MRF6S19140HR3_07
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| OCR Text |
...= 1958.75 MHz, f2 = 1961.25 MHz Two -Tone Measurements, 2.5 MHz Tone Spacing IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1700 mA
-10 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two -Tone Measurements, 2.5 MHz Tone Spacing... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
400.35K /
11 Page |
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it Online |
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Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S19140HSR3 MRF6S19140HR3
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| OCR Text |
...= 1958.75 MHz, f2 = 1961.25 MHz two-tone Measurements, 2.5 MHz Tone Spacing IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1700 mA
-10 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz two-tone Measurements, 2.5 MHz Tone Spacing
... |
| Description |
N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
394.12K /
12 Page |
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it Online |
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Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S19060NR1 MRF6S19060NBR1 MRF6S19060N MRF6S19060NR108
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| OCR Text |
...= 1958.75 MHz, f2 = 1961.25 MHz two-tone Measurements, 2.5 MHz Tone Spacing -20 915 mA
-30
-40
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz two-tone Measurements, 2.5 MHz Tone Spacing
-50
458 mA
763 mA
-60 1 10 Pout... |
| Description |
RF Power Field Effect Transistors
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| File Size |
605.95K /
16 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S18140HSR3 MRF6S18140HR3
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| OCR Text |
...= 1838.75 MHz, f2 = 1841.25 MHz two-tone Measurements, 2.5 MHz Tone Spacing IDQ = 1800 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-10 VDD = 28 Vdc f1 = 1838.75 MHz, f2 = 1841.25 MHz two-tone Measurements, 2.5 MHz Tone Spacing
... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
405.55K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6P9220HR3
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| OCR Text |
...1 = 879.95 MHz, f2 = 880.05 MHz two-tone Measurements, 100 kHz Tone Spacing 2000 mA 1600 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2400 mA -10 VDD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz two-tone Measurements, 100 kHz To... |
| Description |
880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFET
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| File Size |
431.30K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6P9220HR3_06 MRF6P9220HR3 MRF6P9220HR306
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| OCR Text |
...1 = 879.95 MHz, f2 = 880.05 MHz two-tone Measurements, 100 kHz Tone Spacing 2000 mA 1600 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2400 mA
Gps, POWER GAIN (dB)
Figure 4. Single - Carrier N - CDMA Broadband Performance... |
| Description |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
494.89K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6P3300HR5 MRF6P3300H MRF6P3300HR3 MRF6P3300HR3_06
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| OCR Text |
...equipment. * Typical Narrowband Two - Tone Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP Power Gain -- 20.2 dB Drain Efficiency -- 44.1% IMD -- - 30.8 dBc * Typical Narrowband DVBT OFDM Performance @ 860 MHz: VD... |
| Description |
RF Power Field Effect Transistor
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| File Size |
998.42K /
24 Page |
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it Online |
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