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  -40a Datasheet PDF File

For -40a Found Datasheets File :: 37249    Search Time::1.812ms    
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    DZSC
Part No. SS13 SS100
OCR Text ...suffix to part number, see page 4 maximum ratings and electrical characteristics @t a =25c unless otherwise specified characteristic symbo...0a v fm 0.50 0.70 0.85 v peak reverse current @t a = 25c at rated dc blocking voltage ...
Description 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

File Size 80.42K  /  2 Page

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    Linear Technology, Corp.
Part No. LTM4623
OCR Text ... out intv cc mode gnd a 5 1 2 3 4 sgnd freq phmode track/ss run b c d e clkout pgood fb comp t jmax = 125c, v jctop = 17c/w, v jcbottom ...0a to 3a (note 3) C40c to 125c l 1.477 1.50 1.523 v v run run pin on thresho...
Description Ultrathin 20VIN, 3A Step-Down DC/DC 渭Module Regulator

File Size 390.59K  /  24 Page

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    2SK1178

SANKEN[Sanken electric]
Part No. 2SK1178
OCR Text 4.0 16 (Tch 150C) (Ta = 25C) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS ...0A VGS = 10V, ID = 2.0A VDS = 25V, f = 1.0MHz, VGS = 0V ID = 2.0A, VDD = 250V, VGS = 10V, See Figure...
Description MOSFET

File Size 33.49K  /  1 Page

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    IRF7663PBF

International Rectifier
Part No. IRF7663PBF
OCR Text 4.5v -8.2 i d @ t a = 70c continuous drain current, v gs @ -4.5v -6.6 a i dm pulsed drain current -66 p d @t a = 25c power dissipatio...0a, v gs = 0v t rr reverse recovery time ??? 70 105 ns t j = 25c, i f = -2.5a q rr reverse re...
Description Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET

File Size 143.44K  /  7 Page

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Part No. D1951SH65T
OCR Text ... v f typ. ma x. 3,7 7 4 v v schleus ens pa nn ung thresh old voltag e t vj = t vj max v (to) typ. ma x. 1,6 7 1,7 7 v...0a on-stat e c haract eristic t vj = t vj max ma x. d 0,0 66 spitze nwert d er durchlas...
Description 2620 A, 6500 V, SILICON, RECTIFIER DIODE

File Size 207.98K  /  10 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. IRF840BNL
OCR Text ...ve avalanche energy (note 1) 13.4 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t c = 25c) 134 44 w - derate ...0a, v dd = 50v, r g = 25 starting t j = 25c 3. i sd 8.0a, di/dt 200a/ s, v dd ...
Description 500V N-Channel B-FET / Substitute of IRF840 &amp; IRF840A

File Size 921.11K  /  10 Page

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    FAIRCHILD SEMICONDUCTOR CORP
Part No. SSP2N60BJ69Z
OCR Text ...ive avalanche energy (note 1) 5.4 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t c = 25c) 54 23 w - derate a...0a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 2.0a, di/dt 300a/ s, v dd b...
Description 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 855.14K  /  10 Page

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    PanJit International Inc.
Part No. SMF3.0A
OCR Text ... ppm 1 e l b a t e e ss p m a ) 4 e t o n ( n o i t a p i s s i d r e w o p e t a t s y d a e t s p m(av) 0 . 1s t t a w e g n a r e r u t a...0a series r e b m u n t r a p v rwm v br i @ t i r @v rwm v c @i pp g n i k r a m e d o c . n i m . ...
Description SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

File Size 107.89K  /  4 Page

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    2SK1188

SANKEN[Sanken electric]
Part No. 2SK1188
OCR Text ...00 160 35 35 0.2 min 60 500 250 4.0 Ratings typ max Unit V nA A V S pF pF ns ns (Ta = 25C) Unit V V A A W mJ C C Conditions I D = 25...0A VGS = 10V, ID = 5.0A VDS = 25V, f = 1.0MHz, VGS = 0V I D = 5A, VDD = 30V, VGS = 10V, See Figure 2...
Description MOSFET

File Size 33.09K  /  1 Page

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