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NXP Semiconductors N.V.
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Part No. |
BLM6G22-30 BLM6G22-30G
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Description |
Product description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).
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File Size |
141.65K /
14 Page |
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it Online |
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BOURNS INC
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Part No. |
2109-V 2121-V
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Description |
1 ELEMENT, 47 uH, GENERAL PURPOSE INDUCTOR Toroidal Inductor; Series:2100; Inductance:560uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:1.5A; DC Resistance Max:0.30ohm; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
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File Size |
111.32K /
1 Page |
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it Online |
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GHz Technology Microsemi, Corp.
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Part No. |
2021-25
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Description |
25 W, 24 V, 2000-2130 MHz common base transistor 25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz BJT 2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
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File Size |
23.84K /
1 Page |
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it Online |
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Price and Availability
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