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NEC[NEC]
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| Part No. |
2SC4346-Z 2SC4346
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| OCR Text |
...saturation voltage VCE(sat) = 1.0 V MAX. (IC = 2.0 A) * Ultra high-speed switching tf = 0.3 s MAX. (IC = 2.0 A) * Base reverse bias safe operating area is wide VCEX(SUS)1 = 450 V MIN. (IC = 2.0 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Col... |
| Description |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING
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| File Size |
108.20K /
5 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SC4366
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| OCR Text |
...- -- -- -- -- -- Max -- -- -- 1 0.75 2000 -- 0.3 V Unit V V V A V Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 50 V, IE = 0 VCE = 6 V, IC = 1 mA VCE = 6 V, IC = 100 mA (pulse) VCE = 6 V, IC = 1 mA I C = 300... |
| Description |
Silicon NPN Epitaxial
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| File Size |
28.64K /
6 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SC4410
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| OCR Text |
0.425 1.250.1 0.425
Allowing the small current and low voltage operation. High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
... |
| Description |
Silicon NPN epitaxial planer type(For UHF amplification)
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| File Size |
36.79K /
2 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SC4420
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| OCR Text |
...150 Unit V V V V A A A W C C
0.7
s Features
15.00.3 11.00.2
5.00.2 3.2
21.00.5 15.00.2
3.20.1
2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collecto... |
| Description |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
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| File Size |
60.31K /
3 Page |
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Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
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| Part No. |
2SC4423
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| OCR Text |
...y. * Fast switching speed (tf : 0.1s typ). * Wide ASO. * Adoption of MBIT process. * Micaless package facilitating easy mounting.
Package Dimensions
unit:mm 2039D
[2SC4423]
3.4 16.0
5.0 8.0
5.6 3.1
21.0
22.0
20.4
2.8 2... |
| Description |
400V/12A Switching Regulator Applications 400V/12A开关稳压器的应
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| File Size |
38.22K /
4 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SC4462
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| OCR Text |
...Typ -- -- -- -- -- -- 1000 -- 7.0 10.0 Max -- -- -- 0.5 5 -- -- 0.8 -- -- MHz pF dB dB Unit V V V A V Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 10 V, IE = 0 I C = 10 mA, IB = 1 mA VCE = 10 V, IC = 3 mA V... |
| Description |
Silicon NPN Epitaxial
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| File Size |
35.70K /
7 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SC4463
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| OCR Text |
... -- Typ -- -- -- -- -- 120 1000 0.35 Max -- -- -- 0.5 1.0 -- -- 0.65 MHz pF Unit V V V A V Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 10 V, IE = 0 I C = 20 mA, IB = 4 mA VCE = 10 V, IC = 10 mA VCE = 10 V,... |
| Description |
Silicon NPN Epitaxial
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| File Size |
32.77K /
7 Page |
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Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
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| Part No. |
2SC4499S 2SC4499 2SC4499L
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| OCR Text |
...j Tstg
1
Ratings 500 400 10 0.5 1.0 0.75 10 150 -55 to +150
Unit V V V A A W C C
Electrical Characteristics (Ta = 25C)
Item Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol VC... |
| Description |
Silicon NPN Triple Diffused 硅npn型三重扩
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| File Size |
38.62K /
8 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SC4501S 2SC4501 2SC4501L
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| OCR Text |
... Typ -- -- -- -- -- -- -- -- -- 0.4 1.2 0.8 Max -- -- -- 20 50000 1.5 2.0 2.0 3.5 -- -- -- s s s V V Unit V V V A Test conditions IC = 0.1 mA, IE = 0 IC = 1 mA, RBE = _ IE = 0.1 mA, IC = 0 VCB = 24 V, RBE = _ VCE = 3 V, IC = 1.5 A*
1
Co... |
| Description |
Silicon NPN Epitaxial
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| File Size |
31.58K /
5 Page |
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FUJI[Fuji Electric]
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| Part No. |
2SC4509
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| OCR Text |
...IC = 1A, VCE = 5V IC = 4A, IB = 0.8A IC = 5A, IB1 = 0.5A IB2 = -1A, RL = 30 ohm Pw = 20s Duty=<2%
Min.
500 400 10
Typ.
Max.
Units
V V V V mA mA V V s s s
25
0.1 0.1 65 0.8 1.2 1.0 2.5 0.5
Thermal characteristics
Item... |
| Description |
POWER TRANSISTOR
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| File Size |
207.07K /
3 Page |
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Price and Availability
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