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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK2424
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| OCR Text |
...st conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS =450 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V * ID = 4 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5
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| Description |
High speed power switching
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| File Size |
12.55K /
2 Page |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK2426
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| OCR Text |
...BR)GSS I GSS Min 250 30 -- -- 2.0 -- 5.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.23 8.0 1100 440 68 20 65 100 44 1.0 200 Max -- -- 10 250 3.0 0.35 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 12 A,... |
| Description |
Silicon N-Channel MOS FET
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| File Size |
27.44K /
5 Page |
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NEC[NEC]
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| Part No. |
2SK2499-Z 2SK2499
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| OCR Text |
...rent switching applications.
3.0 0.3
PACKAGE DIMENSIONS (in millimeters)
10.6 MAX. 3.6 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 4.8 MAX. 1.3 0.2
FEATURES
* Low On-Resistance
RDS(on)1 = 9 m (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 m... |
| Description |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
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| File Size |
95.08K /
8 Page |
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ROHM[Rohm]
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| Part No. |
2SK2503_1 2SK2503
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| OCR Text |
...nit : mm)
CPT3
6.5 5.1
2.3 0.5
Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy.
5.5
1.5
0.9
0.75 0.65
(1... |
| Description |
4V Drive Nch MOS FET
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| File Size |
79.11K /
6 Page |
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ROHM[Rohm]
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| Part No. |
2SK2504_1 2SK2504 2SK2504TL
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| OCR Text |
...nit : mm)
CPT3
6.5 5.1
2.3 0.5
Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy.
5.5
1.5
0.9
0.75 0.65
(1... |
| Description |
5 A, 100 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET
4V Drive Nch MOS FET
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| File Size |
79.52K /
6 Page |
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it Online |
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FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
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| Part No. |
2SK2523-01
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| OCR Text |
...h=25C
Min. 450 2,5
Typ. 3,0
Max. 3,5 500 1,0 100 1,0 1700 200 75 30 75 90 55 1,65
3,0
10 0,87 6,6 1150 130 50 20 50 60 35 1,1 550 3,9
9,0
Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C
- Thermal Characteristics It... |
| Description |
N-channel MOS-FET
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| File Size |
160.69K /
2 Page |
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FUJI[Fuji Electric]
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| Part No. |
2SK2524-01MR
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| OCR Text |
...h=25C
Min. 450 2,5
Typ. 3,0
Max. 3,5 500 1,0 100 1,0 1700 200 75 30 75 90 55 1,65
3,0
10 0,87 6,6 1150 130 50 20 50 60 35 1,1 550 3,9
9,0
Unit V V A mA nA S pF pF pF ns ns ns ns A A ns C
- Thermal Characteristics It... |
| Description |
N-channel MOS-FET
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| File Size |
144.45K /
2 Page |
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it Online |
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FUJI[Fuji Electric]
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| Part No. |
2SK2526-01
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| OCR Text |
...h=25C
Min. 900 2,5
Typ. 3,0 10 0,2 10 2,7 4,0 750 95 40 20 35 70 35 0,95 1100 5,5
Max. 3,5 500 1,0 100 3,6 1150 145 60 30 55 110 55 1,45
2,0
5,0
Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C
- Thermal Characteristic... |
| Description |
N-channel MOS-FET
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| File Size |
167.90K /
2 Page |
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it Online |
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NEC[NEC]
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| Part No. |
2SK2552B
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| OCR Text |
...
PACKAGE DRAWING (Unit: mm)
0.3 +0.1 -0 0.15 +0.1 -0.05
1.6 0.1
* Low noise: -108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 k) * Especially suitable for audio and telephone * Small package: SC-75 (USM)
0.8 0.1
FEATURES
3... |
| Description |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
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| File Size |
119.57K /
5 Page |
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it Online |
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HITACHI[Hitachi Semiconductor]
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| Part No. |
2SK2568 K2568
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| OCR Text |
...BR)GSS I GSS Min 500 30 -- -- 2.0 -- 6.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.5 10 1560 450 72 22 78 140 60 1.1 105 Max -- -- 10 250 3.0 0.6 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 12 A, VG... |
| Description |
2SK2568
Silicon N-Channel MOS FET
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| File Size |
29.00K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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