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  0.8.9.1.7 Datasheet PDF File

For 0.8.9.1.7 Found Datasheets File :: 374207    Search Time::4.234ms    
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    2SC5050

HITACHI[Hitachi Semiconductor]
Part No. 2SC5050
OCR Text ... gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC...8 1.5 50 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Col...
Description Silicon NPN Epitaxial

File Size 23.65K  /  5 Page

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    2SC5051

HITACHI[Hitachi Semiconductor]
Part No. 2SC5051
OCR Text ...| PG NF Min 15 -- -- -- 50 -- 8.0 -- 11.5 -- Typ -- -- -- -- 120 0.65 11.0 14.0 14.5 1.1 Max -- 10 1 10 250 1.15 -- -- -- 2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V,...
Description Silicon NPN Epitaxial

File Size 23.89K  /  5 Page

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    2SC5060 2SC5060TV2M

Rohm CO.,LTD.
Part No. 2SC5060 2SC5060TV2M
OCR Text ...s (Units : mm) 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) 1.05 14.5 4.4 0.45 !Equivalent circuit C Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base B R1 B : Base C : Co...
Description Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Power transistor (9010V, 3A)
Power transistor (9010V/ 3A)
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits

File Size 50.71K  /  1 Page

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    2SC5071

SANKEN[Sanken electric]
Part No. 2SC5071
OCR Text ...100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=-1A VCB=1...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.88K  /  1 Page

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    2SC5077 2SC5077A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5077 2SC5077A
OCR Text ...IC IB Ta=25C PC Tj Tstg 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 emitter voltage 2SC5077...8 1.0 1.5 1.0 1.0 3.0 0.3 V V MHz s s s min typ max 100 100 100 Unit A A A V 1 Power Transisto...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR

File Size 61.72K  /  3 Page

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    2SC5078

HITACHI[Hitachi Semiconductor]
Part No. 2SC5078
OCR Text ... 50 -- 9 14 -- Typ -- -- -- 120 0.3 12 17 1.6 Max 10 1 10 160 0.8 -- 20 2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 10 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC =...
Description    Silicon NPN Epitaxial

File Size 44.24K  /  7 Page

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    2SC5079

HITACHI[Hitachi Semiconductor]
Part No. 2SC5079
OCR Text ... 50 -- 9 14 -- Typ -- -- -- 120 0.3 12 17 1.6 Max 10 1 10 160 0.8 -- 20 2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 10 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC =...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 24.20K  /  5 Page

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    2SC5080

HITACHI[Hitachi Semiconductor]
Part No. 2SC5080
OCR Text ...- 10.5 15 -- Typ -- -- -- -- 90 0.4 13.5 18 1.1 Max -- 1 1 10 160 0.75 -- -- 2.0 pF GHz dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0,...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 47.56K  /  8 Page

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    2SC5081

HITACHI[Hitachi Semiconductor]
Part No. 2SC5081
OCR Text ...- 10.5 15 -- Typ -- -- -- -- 90 0.4 13.5 18 1.1 Max -- 1 1 10 160 0.75 -- -- 2.0 pF GHz dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0,...
Description Silicon NPN Epitaxial

File Size 24.33K  /  5 Page

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    2SD1030

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1030
OCR Text 0.3 +0.2 s Features q q q q q 0.650.15 +0.25 1.5 -0.05 0.650.15 +0.2 1.1 -0.1 s Absolute Maximum Ratings Parameter Co...8 max 100 1 0.16 -0.06 High foward current transfer ratio hFE. Low collector to emitter sat...
Description Silicon NPN epitaxial planer type(For low-frequency amplification) 50 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236

File Size 36.07K  /  2 Page

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