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Z1210AI 82550080 00ETTT PA0302NL A1105 70M50V5 MS2209 15091450
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    2SC5063

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5063
OCR Text 10.00.3 1.50.1 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q q 1.5max. 1.1max. High-speed switching High collector...100 100 Unit A A V 4.40.5 14.70.5 V 10.00.3 V +0.4 +0 1 Power Transistors...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 60.70K  /  3 Page

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    2SC5071

SANKEN[Sanken electric]
Part No. 2SC5071
OCR Text ...C IB PC Tj Tstg 2SC5071 500 400 10 12(Pulse24) 4 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 sElectr...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.88K  /  1 Page

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    2SC5077 2SC5077A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5077 2SC5077A
OCR Text ....60.2 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operati...100 100 100 Unit A A A V 1 Power Transistors PC -- Ta 60 12 (1) TC=Ta (2) With a 100 x 100 x...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR

File Size 61.72K  /  3 Page

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    2SC5080

HITACHI[Hitachi Semiconductor]
Part No. 2SC5080
OCR Text ... fT PG NF Min 15 -- -- -- 50 -- 10.5 15 -- Typ -- -- -- -- 90 0.4 13.5 18 1.1 Max -- 1 1 10 160 0.75 -- -- 2.0 pF GHz dB dB Unit V A mA A Te...100 120 80 50 40 0 0.1 0 50 100 Ambient Temperature Ta (C) 150 1 10 Collecto...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 47.56K  /  8 Page

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    2SD1010

http://
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1010
OCR Text ...EBO. Low noise voltage NV. 5.10.2 s Features 0.45 -0.1 +0.2 0.45 -0.1 1.27 +0.2 V mA mA mW C C 123 2.30.2 V ...100 1 Unit nA A V V V *h FE Rank classification R 400 ~ 800 S T hFE 600 ~ 1200 1000 ~ 2000...
Description Silicon NPN epitaxial planer type(For low-frequency amplification)

File Size 37.40K  /  2 Page

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    2SD1022

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1022
OCR Text ... Tc = 25C Pulse measurement 1 10 0 0 100 Base Current IB [mA] Base-Emitter Voltage VBE [V] 0.8 2SD1022 10 Switching Time - IC ts Switching Time tSW [s] ton 1 tf IB1 = 0.001IC IB2 = 0.001IC VBB2 = 4V...
Description Darlington Transistor(5A NPN)

File Size 273.90K  /  8 Page

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    2SD1023

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1023
OCR Text ...e ts I =B2 5mA Max 8Es B1 I= R= 10 L Fall Time tf V = 4V Max 5 BB2 2SD1023 hFE - I C VCE = 3V Pulse width = 300s 10000 50C 100...100 0.1 Collector Current IC [A] 2SD1023 Saturation Voltage 3.2 1A 3A 5A 8A 2.8 2.4 2 1.6...
Description Darlington Transistor(5A NPN)

File Size 290.46K  /  9 Page

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    2SD1024

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1024
OCR Text ...C VCE = 3V Pulse width = 300s 1 10 12 0C -25C -55C 100 0.1 Collector Current IC [A] 2SD1024 Saturation Voltage 3.2 3A 5A 8A 12A 2.8 2.4 2 1.6 1.2 0.8 0.4 0 1 10 100 200 3.2 IC = 1A 2.8 2.4 12A 2 8A 5A 3...
Description Darlington Transistor(8A NPN)

File Size 275.54K  /  8 Page

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    2SD1025

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1025
OCR Text ... 1000 25C 0C -25C 1 10 12 100 -55C 0.1 Collector Current IC [A] 2SD1025 Saturation Voltage 3.2 3A 5A 8A 12A 2.8 3.2 1A 2.8 2.4 8A IC = 0.5A 12A 2.4 2 5A 3A 2 1.6 1.6 1A 1.2 1....
Description Darlington Transistor(8A NPN)

File Size 343.47K  /  8 Page

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    2SD1026

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SD1026
OCR Text ...5C 1 VCE = 3V Pulse measurement 10 22 100 0.1 Collector Current IC [A] 2SD1026 Saturation Voltage 3.2 1A 3A 5A 10A 15A 22A 2.8 2.4 2 1.6 1.2 0.8 0.4 0 1 10 100 200 3.2 2.8 IC = 0.5A 2.4 22A 15A 10A 3A 5A 2 1....
Description Darlington Transistor(15A NPN)

File Size 405.96K  /  8 Page

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