|
|
 |

International Rectifier
|
Part No. |
IRF1704
|
OCR Text |
...ameter
ID @ TC = 25C ID @ TC = 100c IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG TLEAD Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source ... |
Description |
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
|
File Size |
100.05K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |

SemeLAB SEME-LAB[Seme LAB] Air Cost Control
|
Part No. |
IRF240SMD
|
OCR Text |
...Tcase = 25C) (VGS = 0 , Tcase = 100c) 13.9A 8.8A 56A 75W 0.6W/C 450mJ 5.0V/ns -55 to 150C 300C 1.67C/W 4C/W
Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 50V , L 1.5mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD ... |
Description |
N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))
|
File Size |
22.29K /
2 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|