Part Number Hot Search : 
CTT60 MBRF10 AR3506L UC1111C LM193WD SB102 RB09331G LM5954
Product Description
Full Text Search
  160-channel Datasheet PDF File

For 160-channel Found Datasheets File :: 32021    Search Time::1.421ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    2SJ364

PANASONIC[Panasonic Semiconductor]
Part No. 2SJ364
OCR Text ... 25 0 0 20 40 60 80 100 120 140 160 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 0 -2 -4 -6 -8 -10 -12 VGS=0V -2.0 -1.5 0.2V 0.4V 0.6V 0.8V -1.0 - 0.5 0 0 1 2 3 4 5 Ambient temperature Ta (C) Drain to source voltage VDS (V) ...
Description Silicon P-Channel Junction FET

File Size 30.25K  /  2 Page

View it Online

Download Datasheet





    2SJ386

HITACHI[Hitachi Semiconductor]
Part No. 2SJ386
OCR Text ...0 80 Ambient Temperature 120 160 Ta (C) 4 2SJ386 Typical Capacitance vs. Drain to Source Voltage 1000 V DS (V) 500 Capacitance C (pF) 200 100 50 0 V DD = -30 V -20 V -10 V I D = -3 A Dynamic Input Characteristics V GS (V) Gate ...
Description Silicon P-Channel MOS FET

File Size 37.10K  /  7 Page

View it Online

Download Datasheet

    2SJ387 2SJ387L 2SJ387S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ387 2SJ387L 2SJ387S
OCR Text ...04 0 -40 -4 V 0 40 80 120 160 Case Temperature Tc (C) 5 2SJ387(L), 2SJ387(S) Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) Capacitance C (pF) 500 Typical Capacitance vs. Drain to Source Voltage 1...
Description Silicon P-Channel MOS FET

File Size 46.71K  /  10 Page

View it Online

Download Datasheet

    2SJ399

Hitachi Semiconductor
Part No. 2SJ399
OCR Text ...-10 V Pulse Test 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 4 2SJ399 Typical Capacitance vs. Drain to Source Voltage 100 50 Capacitance C (pF) Switching Time t (ns) 20 10 5 2 1 0.5 0.2 0.1 0 -10 Crss -20 -30 ...
Description Silicon P-Channel MOS FET

File Size 36.00K  /  7 Page

View it Online

Download Datasheet

    2SJ400

SANYO[Sanyo Semicon Device]
Part No. 2SJ400
OCR Text ...--40 0 40 80 120 160 IT00714 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 0 --5 --10 --15 --20 --25 --30 IT00715 Case Temperature, Tc - C 2 1000 7 5 3 2 100 7 5 3 2 10 3 5 7 --1.0 2 3 5 Drain-to-Source Vol...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 41.78K  /  4 Page

View it Online

Download Datasheet

    2SJ410

HITACHI[Hitachi Semiconductor]
Part No. 2SJ410
OCR Text ...S = 0 VGS = 16 V, VDS = 0 VDS =-160 V, VGS = 0 I D = -1 mA, VDS = -10 V I D = -3 A VGS = -10 V*1 I D = -3 A VDS = -10 V*1 VDS = -10 V VGS = ...Channel Dissipation 20 10 0 50 100 Tc (C) 150 Case Temperature 4 10.0 0....
Description    Silicon P-Channel MOS FET

File Size 29.02K  /  6 Page

View it Online

Download Datasheet

    2SJ411 D11219EJ1V0DS00

NEC[NEC]
Part No. 2SJ411 D11219EJ1V0DS00
OCR Text ...0 195 185 29.8 2.7 11.5 1.0 140 160 0.24 0.11 -1.4 MIN. TYP. MAX. -10 10 -2.0 UNIT A A V S pF pF pF ns ns ns ns nC nC nC V ns nC TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 -100 -50 ...
Description    P-CHANNEL SIGNAL MOS FET FOR SWITCHING
From old datasheet system

File Size 67.31K  /  6 Page

View it Online

Download Datasheet

    2SJ413

SANYO[Sanyo Semicon Device]
Part No. 2SJ413
OCR Text ...0 -20 0 20 40 60 80 100 120 140 160 Ciss, Coss, Crss - pF 0V =-1 ,VGS A -25 =-4V I D= ,VGS -25A I D= 10000 7 5 3 2 1000 7 5 3 2 100 0 -5 -10 -15 -20 -25 Ciss Coss Crss -30 Case Temperature, Tc - C Drain-to-Source Vo...
Description Ultrahigh-Speed Switching Applications

File Size 78.32K  /  4 Page

View it Online

Download Datasheet

    2SJ418

SANYO[Sanyo Semicon Device]
Part No. 2SJ418
OCR Text ...ate-to-Source Voltage, VGS - V 160 140 120 100 80 60 40 20 0 0 yfs -- ID VDS=-10V 25C 25C R DS(on) - VGS Tc=25C ID=-4A Forward Transfer Admittance, | yfs | - S Tc=75C Static Drain-to-Source On-State Resistance, RDS(on) - ...
Description Ultrahigh-Speed Switching Applications

File Size 126.59K  /  4 Page

View it Online

Download Datasheet

    2SJ448

NEC[NEC]
Part No. 2SJ448
OCR Text ... 10 5 0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 0 20 40 60 80 100 120 140 160 TC - Cas...CHANNEL TEMPERATURE VDS = -10 V ID = -1 mA RDS(on) - Drain to Source On-State Resistance - 4....
Description SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 117.41K  /  8 Page

View it Online

Download Datasheet

For 160-channel Found Datasheets File :: 32021    Search Time::1.421ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 160-channel

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
2.4103691577911