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    GS816032T-166 GS816036T-133 GS816036T-150 GS816036T-133I GS816036T-166 GS816036T-150I GS816036T-166I GS816036T-250 GS816

ETC
Electronic Theatre Controls, Inc.
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GSI Technology
Part No. GS816032T-166 GS816036T-133 GS816036T-150 GS816036T-133I GS816036T-166 GS816036T-150I GS816036T-166I GS816036T-250 GS816036T-200 GS816036T-200I GS816018T-150I GS816018T-250 GS816032T-150 GS816032T-250I GS816032T-166I GS816032T-250 GS816018T-200I GS816018T-133 GS816032T-225I GS816032T-133I GS816018T-133I GS816036T-225I GS816018T-166 GS816018T-225I GS816032T-150I
OCR Text ... 1M x 18, 512K x 32, 512K x 36 18mb Sync Burst SRAMs 250 MHz-133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally an...
Description Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 50V; Case Size: 8x11.5 mm; Packaging: Bulk
1M x 18, 512K x 32, 512K x 36 18mb Sync Burst SRAMs 1M×1812k×3212k×36 18M位同步突发静态存储器
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x11 mm; Packaging: Bulk
Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70
Quad 2-input positive-NAND buffers with open collector outputs 14-SOIC 0 to 70
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 10x16 mm; Packaging: Bulk
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 2200uF; Voltage: 25V; Case Size: 18x35.5 mm; Packaging: Bulk
1M x 18/ 512K x 32/ 512K x 36 18mb Sync Burst SRAMs
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 50V; Case Size: 10x20 mm; Packaging: Bulk

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    GS8161E32D-166 GS8161E32D-166I GS8161E3T-200 GS8161E32D-133I GS8161E32D-225I GS8161E32D-150I GS8161E32D-250 GS8161E18D-2

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GSI Technology
Electronic Theatre Controls, Inc.
Part No. GS8161E32D-166 GS8161E32D-166I GS8161E3T-200 GS8161E32D-133I GS8161E32D-225I GS8161E32D-150I GS8161E32D-250 GS8161E18D-200 GS8161E36D-225I GS8161E18D-133 GS8161E18D-133I GS8161E18T-133 GS8161E18D-225 GS8161E18D-225I GS8161E36T-133I GS8161E32D-200 GS8161E36T-166 GS8161E36T-225I GS8161E36T-166I GS8161E18T-150 GS8161E36D-166 GS8161E18T-166 GS8161E18T-133I GS8161E18D-150I GS8161E36T-250 GS8161E36T-150 GS8161E36T-150I
OCR Text ... 1M x 18, 512K x 32, 512K x 36 18mb Sync Burst SRAMs 250 MHz-133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with ...
Description 14-Bit Registered Buffer With SSTL_2 Inputs and Outputs 48-TVSOP 0 to 70 100万1812k × 32的,12k × 36 35.7同步突发静态存储器
1M x 18, 512K x 32, 512K x 36 18mb Sync Burst SRAMs 1M×18512k×32512k×36 18M位同步突发静态存储器
20-Bit SSTL_3 Interface Buffer With 3-State Outputs 64-TSSOP 0 to 70 100万1812k × 32的,12k × 36 35.7同步突发静态存储器
25-Bit Configurable Registered Buffer With Address-Parity Test 96-LFBGA 0 to 70 100万1812k × 32的,12k × 36 35.7同步突发静态存储器
1M x 18, 512K x 32, 512K x 36 18mb Sync Burst SRAMs 1M×1812k×3212k×36 18M位同步突发静态存储器
Quad 2-input Exclusive-OR gates 14-PDIP 0 to 70 100万1812k × 32的,12k × 36 35.7同步突发静态存储器
25-Bit Configurable Registered Buffer with SSTL_18 Inputs and Outputs 96-LFBGA 0 to 70 100万1812k × 32的,12k × 36 35.7同步突发静态存储器
20-Bit SSTL_3 Interface Universal Bus Driver With 3-State Outputs 64-TSSOP 0 to 70
Quad 2-input Exclusive-OR gates 14-SOIC 0 to 70
13-Bit to 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 56-VQFN 0 to 70

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GSI Technology, Inc.
Electronic Theatre Controls, Inc.
Part No. GS8161Z32D-166 GS8161Z32D-166I GS8161Z32D-166T GS8161Z32D-133I GS8161Z32D-133IT GS8161Z32D-133T GS8161Z32D-225 GS8161Z32D-225I GS8161Z32D-225T GS8161Z32D-225IT GS8161Z32D-150I GS8161Z32D-250 GS8161Z32D-150T GS8161Z32D-150IT GS8161Z18D-200 GS8161Z32D-250I GS8161Z36T-166T GS8161Z32T-166 GS8161Z32T-225IT GS8161Z32T-166IT GS8161Z32T-166T GS8161Z18D-225 GS8161Z18D-225I GS8161Z18D-225IT GS8161Z18D-225T GS8161Z18T-150I GS8161Z18T-133T GS8161Z18D-166I GS8161Z18D-133I GS8161Z18T-133IT GS8161Z36T-166IT GS8161Z36D-250IT GS8161Z18T-166IT GS8161Z18D-133T GS8161Z32T-133T GS8161Z36T-150IT GS8161Z36T-133IT GS8161Z32T-133IT GS8161Z36D-225T GS8161Z36D-150T GS8161Z36D-250T GS8161Z36T-225I GS8161Z36T-225IT GS8161Z36T-225T GS8161Z18D-150T GS8161Z32D-250T GS8161Z18T-250 GS8161Z32D-250IT GS8161Z32T-225T GS8161Z18T-250I GS8161Z18T-250T GS8161Z18T-225T GS8161Z18T-250IT GS8161Z18D-133IT GS8161Z36D-133T GS8161Z36T-133T GS8161Z36D-166I GS8161Z18T-225IT GS8161Z32T-200IT GS8161Z36D-133IT GS8161Z32D-200IT GSITECHNOLOGY-GS8161Z32D-200IT GS8161Z36T-200 GS8161Z36T-150 GS8161Z36T-150I GS8161Z36T-133 GS8161Z36T-166 GS8161Z36T-133I GS8161Z36T-166I
OCR Text ...and 165-bump FP-BGA packages 18mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz-133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/ write control inputs are ca...
Description 512K X 36 ZBT SRAM, 6 ns, PBGA165
Dual Voltage Clamp 8-SM8 -40 to 85 35.7流水线和流量,通过同步唑的SRAM
10-Bit Voltage Clamp 24-SOIC -40 to 85 35.7流水线和流量,通过同步唑的SRAM
10-Bit Voltage Clamp 24-TVSOP -40 to 85 35.7流水线和流量,通过同步唑的SRAM
24-Bit to 48-Bit Registered Buffer with SSTL_2 Inputs and Outputs 114-BGA MICROSTAR 0 to 70 35.7流水线和流量,通过同步唑的SRAM
RECTIFIER SCHOTTKY SINGLE 1A 20V 30A-Ifsm 0.5Vf 0.5A-IR SMA 5K/REEL 35.7流水线和流量,通过同步唑的SRAM
512K X 36 ZBT SRAM, 7 ns, PQFP100 TQFP-100
18mb Pipelined and Flow Through Synchronous NBT SRAM 35.7流水线和流量,通过同步唑的SRAM
GIGABASE 350 CAT5E PATCH 4 FT, SNAGLESS, PURPLE 35.7流水线和流量,通过同步唑的SRAM
22-Bit Voltage Clamp 48-TVSOP -40 to 85
Dual Voltage Clamp 8-US8 -40 to 85
GIGABASE 350 CAT5E PATCH 25 FT, SNAGLESS, PURPLE
8192 x 18 Synchronous FIFO Memory 80-LQFP 0 to 70
1024 x 18 Synchronous FIFO Memory 64-TQFP 0 to 70
RECTIFIER SCHOTTKY SINGLE 1A 30V 25A-Ifsm 0.41Vf 1A-IR SMA 5K/REEL
CAT5E PATCH CORD PURPLE 5FT
Replaced by SN74TVC16222A : 22-Bit Voltage Clamp 48-TSSOP -40 to 85
2048 x 18 Synchronous FIFO Memory 64-TQFP 0 to 70
13-Bit to 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 64-TSSOP 0 to 70
ENHANCED PATCH CORD PURPLE 3 FT
13-Bit to 26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 56-VQFN 0 to 70
14-Bit Registered Buffer With SSTL_2 Inputs and Outputs 48-TSSOP 0 to 70
26-Bit Registered Buffer with SSTL_2 Inputs and Outputs 96-LFBGA 0 to 70
Enhanced Product 26-Bit Registered Buffer With Sstl_2 Inputs And Lvcmos Outputs 96-LFBGA -40 to 85
10-Bit Voltage Clamp 24-TSSOP -40 to 85
4096 x 18 Synchronous FIFO Memory 64-TQFP 0 to 70
10-Bit Voltage Clamp 24-SSOP/QSOP -40 to 85
22-Bit Voltage Clamp 48-SSOP -40 to 85

File Size 600.26K  /  36 Page

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    GSI[GSI Technology]
Part No. GS8162Z72C-200I GS8162Z72C GS8162Z72C-133 GS8162Z72C-133I GS8162Z72C-150 GS8162Z72C-150I GS8162Z72C-166 GS8162Z72C-166I GS8162Z72C-200
OCR Text ...tandard 209-Bump BGA package 18mb Pipelined and Flow Through Synchronous NBT SRAM 200 MHz-133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O Because it is a synchronous device, address, data inputs, and read/write control inputs are cap...
Description 18mb Pipelined and Flow Through Synchronous NBT SRAM

File Size 759.96K  /  31 Page

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    GSI[GSI Technology]
Part No. GS8161E3T-200 GS8161E18 GS8161E18D-133 GS8161E18D-133I GS8161E18D-150 GS8161E18D-150I GS8161E18D-166 GS8161E18D-166I GS8161E18D-200 GS8161E18D-200I GS8161E18D-225 GS8161E18D-225I GS8161E18D-250 GS8161E18D-250I GS8161E18T-133 GS8161E18T-133I GS8161E18T-150 GS8161E18T-150I GS8161E18T-166 GS8161E18T-166I GS8161E18T-200 GS8161E18T-200I GS8161E18T-225 GS8161E18T-225I GS8161E18T-250 GS8161E18T-250I GS8161E32D-133 GS8161E32D-133I GS8161E32D-150 GS8161E32D-150I GS8161E32D-166 GS8161E32D-166I GS8161E32D-200 GS8161E32D-200I GS8161E32D-225 GS8161E32D-225I GS8161E32D-250 GS8161E32D-250I GS8161E36D-133 GS8161E36D-133I GS8161E36D-150 GS8161E36D-150I GS8161E36D-166 GS8161E36D-166I GS8161E36D-200 GS8161E36D-200I GS8161E36D-225 GS8161E36D-225I GS8161E36D-250 GS8161E36D-250I GS8161E36T-133 GS8161E36T-133I GS8161E36T-150 GS8161E36T-150I GS8161E36T-166 GS8161E36T-166I GS8161E36T-200I GS8161E36T-225 GS8161E36T-225I GS8161E36T-250I
OCR Text ... 1M x 18, 512K x 32, 512K x 36 18mb Sync Burst SRAMs 250 MHz-133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with ...
Description 1M x 18, 512K x 32, 512K x 36 18mb Sync Burst SRAMs

File Size 593.82K  /  36 Page

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    GSI[GSI Technology]
Part No. GS8160Z36T-250I GS8160Z18T GS8160Z18T-133 GS8160Z18T-133I GS8160Z18T-150 GS8160Z18T-150I GS8160Z18T-166 GS8160Z18T-166I GS8160Z18T-200 GS8160Z18T-200I GS8160Z18T-225 GS8160Z18T-225I GS8160Z18T-250 GS8160Z18T-250I GS8160Z36T-133 GS8160Z36T-133I GS8160Z36T-150 GS8160Z36T-150I GS8160Z36T-166 GS8160Z36T-166I GS8160Z36T-200 GS8160Z36T-200I GS8160Z36T-225 GS8160Z36T-225I GS8160Z36T-250 GS8160Z18
OCR Text 18mb Pipelined and Flow Through Synchronous NBT SRAM 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O * NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization; Fully pin-compatible with both pipelined and flow th...
Description 18mb Burst SRAMs
18mb Pipelined and Flow Through Synchronous NBT SRAM

File Size 432.38K  /  24 Page

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    HMC550 HT6740 HYB25S1G800TCL-37 HFV6 HY5V22LF-P HY5V52LF-S HY5V22LF-6 IDT72V36110L7.5PF

美国讯泰微波有限公司上海代表
Holtek Semiconductor Inc.
Infineon Technologies AG
厦门宏发电声股份有限公司
Hynix Semiconductor Inc.
Integrated Device Technology, Inc.
Part No. HMC550 HT6740 HYB25S1G800TCL-37 HFV6 HY5V22LF-P HY5V52LF-S HY5V22LF-6 IDT72V36110L7.5PF
OCR Text ...in-compatible with present 9Mb, 18mb, 36Mb and future 144Mb devices * 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package * RoHS-compliant 165-bump BGA package available 72Mb SigmaCIO DDR-II Burst of 2 SRAM 333 MHz-167 MHz 1.8 V VDD ...
Description GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz
13.56MHz RFID Transponder
MEMORY SPECTRUM
AUTOMOTIVE RELAY
4 Banks x 1M x 32Bit Synchronous DRAM
4Banks x 2M x 32bits Synchronous DRAM
3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO

File Size 921.87K  /  37 Page

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    GS816032T-166I GS816018T-133 GS816018T-133I GS816032T-133 GS816036T-250I GS816032T-200 GS816032T-200I GS816032T-250 GS81

GSI Technology
Part No. GS816032T-166I GS816018T-133 GS816018T-133I GS816032T-133 GS816036T-250I GS816032T-200 GS816032T-200I GS816032T-250 GS816018T-166 GS816018T-166I GS816036T-200 GS816036T-200I GS816036T-225 GS816036T-225I GS816018T-200 GS816018T-200I GS816018T-225 GS816018T-225I GS816018T-250I GS816032T-150I GS816032T-225 GS816032T-225I GS816032T-133I
OCR Text ... 1M x 18, 512K x 32, 512K x 36 18mb Sync Burst SRAMs 250 MHz-133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally an...
Description 1M x 18, 512K x 32, 512K x 36 18mb Sync Burst SRAMs

File Size 810.01K  /  28 Page

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    K7K1636U2C K7K1618U2C

Samsung semiconductor
Part No. K7K1636U2C K7K1618U2C
OCR Text 18mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED A...
Description 512Kx36 & 1Mx18 DDRII CIO b2 SRAM

File Size 415.85K  /  19 Page

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    A67L7332E-6 A67L7332E-45 A67L7332E-5 A67L8318E-6 A67L8318E-5 A67L8318E-45 A67L7336E-45 A67L8316E-45 A67L8316E-5 A67L8316

AMIC Technology Corporation
AMIC Technology, Corp.
Part No. A67L7332E-6 A67L7332E-45 A67L7332E-5 A67L8318E-6 A67L8318E-5 A67L8318E-45 A67L7336E-45 A67L8316E-45 A67L8316E-5 A67L8316E-6 A67L7336E-5 A67L7336E-6 A67L8318 A67L7336 A67L8316 A67L8316E-4.5
OCR Text ...bits for higher-density 9Mb and 18mb DBA SRAMs, respectively. A0 and A1 are the two lest significant bits (LSB) of the address field and set the internal burst counter if burst is desired. Synchronous Byte Write Enables : These active low i...
Description 256K X 16/18/ 128K X 32/36 LVTTL/ Pipelined DBA SRAM
T1 CABLE DB15M-DB15M CROSS PINNED 10 FT.
T1 CABLE RJ48-RJ48 CROSS PINNED 10 FEET
T1 CABLE DB15M-RJ48 CROSS PINNED 25 FT.
256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM 256 × 16/1828K的X 32/36 LVTTL,管线数据库管理员的SRAM
Cycle time:7ns; access time:4.5ns; 256K x 16 LVTTL, pipelined DBA SRAM

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