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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFSA5406
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| OCR Text |
...10v, v ds =30v, r l =30 ? ,i d =1a, r gen =6 ? -917 ns rise time t r -612 turn-off delay time t d(off) -2546 fall time t f -510 total gate charge q g v ds =30v, v gs =10v, i d =5a -1927 nc gate-to-source charge q gs -4.4 - gate-to-drain ?mi... |
| Description |
N- Channel and P-Channel Silicon MOSFETs
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| File Size |
512.39K /
8 Page |
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it Online |
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Winsemi
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| Part No. |
WFSA5406
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| OCR Text |
...10v, v ds =30v, r l =30 ? ,i d =1a, r gen =6 ? -917 ns rise time t r -612 turn-off delay time t d(off) -2546 fall time t f -510 total gate charge q g v ds =30v, v gs =10v, i d =5a -1927 nc gate-to-source charge q gs -4.4 - gate-to-drain ?mi... |
| Description |
N- Channel and P-Channel Silicon MOSFETs
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| File Size |
574.43K /
8 Page |
View
it Online |
Download Datasheet |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO6401a
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| OCR Text |
...c diode forward voltage i s =-1a,v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditi...30v p-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 17 ... |
| Description |
30v P-Channel MOSFET
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| File Size |
387.61K /
5 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4607
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| OCR Text |
...vds (v) = 30v, if = 3a, vf<0.5v@1a the ao4607 uses advanced trench technology mosfets to provide excelle n r ds(on) and low gate charge. the complementary mosfets may be used in inverter and other applications. a schottky diode is co-p... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
407.02K /
8 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
PMV37EN
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| OCR Text |
...t v gs =10v; t amb =25c [1] --3.1a static characteristics r dson drain-source on-state resistance v gs =10v; i d =3.1a; t j = 25 c - 28 36 ...30v; v gs =0v; t j =25c --1a v ds =30v; v gs =0v; t j =150c --10a i gss gate leakage current v gs =2... |
| Description |
30 V, 3.1 A N-channel Trench MOSFET High-speed line driver Switching circuits
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| File Size |
367.13K /
3 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4610
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| OCR Text |
...d = 8.5a(v gs =10v) -7.1a(v gs = -10v) r ds(on) r ds(on) < 18m ? (v gs =10v) < 25m ...30v, t j =125c v r =30v, t j =150c junction capacitance v r =15v forward voltage drop i f =1.0a i rm... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
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| File Size |
440.98K /
9 Page |
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it Online |
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TY Semiconductor Co., Ltd
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| Part No. |
PMV20XN
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| OCR Text |
... source current t amb =25c [1] -1a 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard...30v; v gs =0v; t j =25c --1a v ds =30v; v gs =0v; t j =150c --20a i gss gate leakage current v gs =1... |
| Description |
30 V, 4.8 A N-channel Trench MOSFET High-speed line driver
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| File Size |
373.41K /
4 Page |
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it Online |
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