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HYNIX
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Part No. |
HY62SF16806A-I HY62SF16806A-C
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OCR Text |
...20ns Change DC Parameter - Icc1(1us) : 5mA a 4mA Change Data Retention - IccDR(LL) : 25uA a 15uA Change AC Parameter - tOE : 40ns a 35ns@70ns Draft Date Apr.10.2001 Apr.28.2001 Remark Preliminary
02
Jul.18.2001
03
Jan.28.2002
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Description |
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
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File Size |
136.14K /
11 Page |
View
it Online |
Download Datasheet
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HYNIX SEMICONDUCTOR INC
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Part No. |
HY62SF16804A-I HY62SF16804A-C HY62SF16804A-SM10I
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OCR Text |
...20ns Change DC Parameter - Icc1(1us) : 5mA a 4mA Change Data Retention - IccDR(LL) : 25uA a 15uA Change AC Parameter - tOE : 40ns a 35ns@70ns Draft Date Jul.02.2000 Remark Preliminary
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Oct.23.2000
Preliminary
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Nov.13.2000... |
Description |
512K X 16 STANDARD SRAM, 100 ns, PBGA48 High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
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File Size |
134.73K /
10 Page |
View
it Online |
Download Datasheet
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HYNIX
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Part No. |
HY62LF16806A-C HY62LF16806A-I
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OCR Text |
...uA a - Isb1(Typ) : 8uA a - Icc1(1us) : 5mA a Change Data Retention - IccDR(LL) : 25uA a Change AC Parameter - tOE : 40ns a 25uA 1uA 4mA 15uA 35ns@70ns Draft Date Apr.10.2001 Apr.28.2001 Remark Preliminary
02
Jan.28.2002
This docume... |
Description |
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
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File Size |
150.39K /
11 Page |
View
it Online |
Download Datasheet
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Price and Availability
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