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200..240v Datasheet PDF File

For 200..240v Found Datasheets File :: 1355 Search Time::1.5ms
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				ANALOG DEVICES INC AD[Analog Devices] Analog Devices, Inc.
Part No.	5B47-K-05 5B47-K-04 5B47-J-01 5B47-J-02 5B47-J-03 5B47-T-07 5B47 5B47-B-11 5B47-CUSTOM 5B47-E-08 5B47-R-09 5B47-S-10 5B47-T-06
OCR Text	... 10% to 90% Span 500 V rms 4 Hz 200 ms Common-Mode Voltage (CMV) Input-to-Output, Continuous Output-to-Power, Continuous4 Transient 1500 V rms, maximum 3 V, maximum ANSI/IEEE C37.90.1-1989 Common Mode Rejection (CMR) 1 k Source Imb...
Description	Isolated, Linearized Thermocouple Input SPECIALTY ANALOG CIRCUIT, XMA Isolated Linearized Thermocouple Input Signal Conditioning Module
File Size	687.65K / 8 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard)
Part No.	10773A 10769A 10769B 10767A 10767B 10772A 10785A
OCR Text	...) 2.5% 2.5 m (100 in) 2.5% 5 m (200 in) A-Quad-B Input Differential Input Threshold 0.5 V minimum 7.0 V maximum Differential Input Imped...240V, 47-63Hz,1A Environmental: Operating Range: 0-40C Minimum Requirements: IBM compatible Computer...
Description	10773A Flatness Mirror 10769B Turning Mirror on Universal Mount 10785A Optics Height Adjuster and Post
File Size	286.70K / 13 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	MMBD2004S MMBD2004S-7
OCR Text	...0.1 0.01 0 1 2 0.01 0 100 200 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics Tj, JUNCTION TEMPERATURE (C) Fig. 2 Leakage Current vs Junction Temperature 500 Pd, POWER DISSIPATION (mW) 400 300 2...
Description	SURFACE MOUNT SWITCHING DIODE
File Size	156.61K / 2 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STTA12006TV1 STTA12006TV2 STTA6006P -STTA12006TV2
OCR Text	...n Typ 1.25 5 Max 1.75 1.5 200 12 1.14 6 Unit V V A mA V m ** Vto rd Test pulses : To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS ...
Description	TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
File Size	72.37K / 8 Page	View it Online	Download Datasheet

				意法半导 STMicroelectronics
Part No.	STTA1206D STTA1206DI STTA1206G STTA1206G-TR -STTA1206G-TR
OCR Text	... 0.50 0.25 12 0.00 0.1 1 10 100 200 IFM(A) 5 IF(av)(A) 0 0 1 2 3 4 5 6 7 8 9 10 =tp/T tp 11 Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. K 1 K= Zth(j-c) (tp. ) Rth(j-c) ...
Description	TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
File Size	86.97K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics 意法半导
Part No.	STTA306B STTA306B-TR
OCR Text	...20 40 60 80 100 120 140 160 180 200 tp tp(s) 1E-3 1E-3 1E-2 1E-1 1E+0 1E+1 =tp/T 0 1E+2 5E+2 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 350 300 250 200 150 100 50 0 0 20 IF=IF(av) IF=2*IF(av) VR...
Description	TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT06; No. of Contacts:15; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE
File Size	110.26K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGI4065PBF
OCR Text	...8.0V GE V = 6.0V GE TOP 240 200 ICE (A) BOTTOM 240 200 ICE (A) BOTTOM V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE ...240V 900 Energy per Pulse (J) T C, Case Temperature (C) Case Temperature (C) Fig 8. Typica...
Description	PDP TRENCH IGBT
File Size	318.84K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
Part No.	APT11GF120BRDQ1 APT11GF120BRDQ1G
OCR Text	...urrent 800 700 600 500 400 300 200 100 TJ = 25C = 800V V CE = +15V V GE R = 10 G 0 2000 TJ = 125C TJ = 125C 1500 1000 500 TJ = 25C 20 16 12 8 4 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Los...
Description	FAST IGBT & FRED Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC
File Size	427.50K / 9 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT25GP120BDQ1 APT25GP120BDQ1G
OCR Text	...IN TYP MAX UNIT pF V nC 2090 200 40 7.5 110 15 50 90 12 14 70 39 500 1090 440 12 14 110 90 500 1575 1185 J ns ns A Gate-Emitter Charg...240V VCE =600V 60 TJ = -55C 40 TJ = 25C 20 TJ = 125C 0 8 6 4 2 0 VCE = 480V 0 234 56 ...
Description	POWER MOS 7 IGBT
File Size	207.46K / 9 Page	View it Online	Download Datasheet

				RENESAS[Renesas Electronics Corporation]
Part No.	H5N3003P H5N3003
OCR Text	... Power vs. Temperature Derating 200 Maximum Safe Operation Area 1000 300 Pch (W) ID (A) 150 100 30 10 3 1 this area is 0.3 0.1 Operation in limited by RDS(on) PW DC Op er Channel Dissipation = 1m 10 (T 10 ...
Description	Transistors>Switching/MOSFETs Silicon N Channel MOS FET High Speed Power Switching
File Size	128.15K / 10 Page	View it Online	Download Datasheet

For 200..240v Found Datasheets File :: 1355 Search Time::1.5ms
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