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    70TPS16PBF 70TPS12PBF

Vishay Siliconix
Part No. 70TPS16PBF 70TPS12PBF
OCR Text ...le RoHS* COMPLIANT Super-247 1 (K) (G) 3 PRODUCT SUMMARY VT at 100 A ITSM VRRM < 1.4 V 1400 A 1200/1600 V Typical applications are in input rectification (soft start) or AC-switches or high current crow-bar as well as ot...
Description Phase Control SCR, 70 A

File Size 113.97K  /  7 Page

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    MJW18020 JW18020 MJW18020-D

ONSEMI[ON Semiconductor]
Part No. MJW18020 JW18020 MJW18020-D
OCR Text ... Vdc Vdc Vdc Adc Adc 3 TO-247 CASE 340K STYLE 3 MARKING DIAGRAM MJW 18020 LLYWW 1 BASE 3 EMITTER Watts W/_C _C 2 COLLECTOR MJW18020= Device Code LL = Location Code Y = Year WW = Work Week THERMAL CHARACTERISTICS Charac...
Description NPN Silicon Power Transistors High Voltage Planar 30A 1000 Volts BVces 450 Volts BVceo 250 Watts

File Size 55.68K  /  8 Page

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    MJW21193 MJW21194 MJW21193-D

ONSEMI[ON Semiconductor]
Part No. MJW21193 MJW21194 MJW21193-D
OCR Text ...250 VOLTS 200 WATTS 1 2 3 TO-247 CASE 340K STYLE 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RJC RJA Max 0.7 40 Unit C/W C/W MJW 2119...
Description Silicon Power Transistors

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    MJW21195 MJW21196 MJW21195-D

ONSEMI[ON Semiconductor]
Part No. MJW21195 MJW21196 MJW21195-D
OCR Text ...250 VOLTS 200 WATTS 1 2 3 TO-247 CASE 340K STYLE 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RJC RJA Max 0.7 40 Unit C/W C/W MJW 2119...
Description Silicon Power Transistors (NPN)
Silicon Power Transistors (PNP)

File Size 92.02K  /  8 Page

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    MJW3281A MJW1302A MJW3281A-D

ONSEMI[ON Semiconductor]
Part No. MJW3281A MJW1302A MJW3281A-D
OCR Text ... xxxxA LLYWW 3 EMITTER 1 2 3 TO-247 CASE 340K STYLE 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2 COLLECTOR MJWxxxxA = Device Code xxxx = 32...
Description Complementary NPN-PNP Silicon Power Bipolar Transistors

File Size 91.87K  /  8 Page

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    STB46NF30 STP46NF30 STW46NF30

ST Microelectronics
STMicroelectronics
Part No. STB46NF30 STP46NF30 STW46NF30
OCR Text ...osfet in d 2 pak, to-220 and to-247 packages datasheet ? production data features exceptional dv/dt capability 100% avalanche tested low gate charge applications switching applications ? automotive description these power mosfets have ...
Description N-channel 300 V, 0.063 Ohm typ., 42 A STripFET(TM) II Power MOSFET in a D2PAK package
N-channel 300 V, 0.063 Ω typ, 42 A, STripFET II Power MOSFET in D2PAK, TO-220 and TO-247 packages
N-channel 300 V, 0.063 Ω typ, 42 A, STripFET?II Power MOSFET in D2PAK, TO-220 and TO-247 packages

File Size 1,029.77K  /  19 Page

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    IPP60R125P6 IPA60R125P6 IPW60R125P6 IPX60R125P6

Infineon Technologies AG
Infineon Technologies A...
Part No. IPP60R125P6 IPA60R125P6 IPW60R125P6 IPX60R125P6
OCR Text ...2014-03-07 final data sheet to-247 to-220 to-220fp 1description coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coo...
Description LED Driver IC and Lighting IC
Increased MOSFET dv/dt ruggedness
Metal Oxide Semiconductor Field Effect Transistor

File Size 2,732.11K  /  18 Page

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    STW45NM50FD09 STW45NM50FD

STMicroelectronics
Part No. STW45NM50FD09 STW45NM50FD
OCR Text 247 FDmeshTM Power MOSFET (with fast diode) Features Type STW45NM50FD VDSS 500 V RDS(on) max < 0.1 ID 45 A 100% avalanche tested High dv/dt and avalanche capabilities Low input capacitance and gate charge Low gate input ...
Description 45 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh Power MOSFET (with fast diode)
N-channel 500 V, 0.07 楼?, 45 A, TO-247 FDmesh垄芒 Power MOSFET (with fast diode)

File Size 560.34K  /  12 Page

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    IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1

IXYS Corporation
Part No. IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1
OCR Text ...P) G C C (TAB) E TO-247 (IXGH) G = Gate E = Emitter Features C = Collector TAB = Collector 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220 & TO-247) TO-263 TO-220 TO-247 300 26...
Description GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

File Size 281.01K  /  7 Page

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