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  3.541 Datasheet PDF File

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    APT8030B2VR

ADPOW[Advanced Power Technology]
Part No. APT8030B2VR
OCR Text ... Capacitance Total Gate Charge 3 APT8030B2VR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT 6600 645 320 340 31 170 ...
Description POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.13K  /  4 Page

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    APT8030JN APT8035JN

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8030JN APT8035JN
OCR Text ... Capacitance Total Gate Charge 3 APT8030/8035JN Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT 5780 725 240 245 28...
Description POTENTIOMETER, 1.5W 50K POTENTIOMETER, 1.5W 50K; VARIABLE ROTARY WIREWOUND; RESISTANCE, TRACK:50KR; SERIES:535; POWER RATING:1.5W; CASE STYLE:PANEL MOUNT; DIAMETER, BODY:22.2MM; DIAMETER, SHAFT:6.35MM; TURNS, NO. RoHS Compliant: Yes N沟道增强型高压功率MOSFET
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS V 800V 27.0A 0.30/0.35 Ohm

File Size 61.59K  /  4 Page

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    APT8030JVFR

ADPOW[Advanced Power Technology]
Part No. APT8030JVFR
OCR Text ...ts Amps 800 25 100 30 40 450 3.6 -55 to 150 300 25 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Diss...541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Dis...
Description POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 69.94K  /  4 Page

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    APT8030JVR

ADPOW[Advanced Power Technology]
Part No. APT8030JVR
OCR Text ...ts Amps 800 25 100 30 40 450 3.6 -55 to 150 300 25 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Diss...541) 382-8028 Phone: (33) 5 57 92 15 15 CAUTION: These Devices are Sensitive to Electrostatic Dis...
Description POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 67.66K  /  4 Page

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    APT8030LVFR APT8030LVFRG

Microsemi Corporation
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT8030LVFR APT8030LVFRG
OCR Text ... Capacitance Total Gate Charge 3 APT8030LVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT pF 6600 645 320 340 31...
Description POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 62.47K  /  4 Page

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    APT8030LVR

ADPOW[Advanced Power Technology]
Part No. APT8030LVR
OCR Text ... Capacitance Total Gate Charge 3 APT8030LVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT 6600 645 320 340 31 170 1...
Description POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.26K  /  4 Page

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    APT8030 APT8030B2VFR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT8030 APT8030B2VFR
OCR Text ... Capacitance Total Gate Charge 3 APT8030B2VFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT pF 6600 645 320 340 3...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 27A 0.300 Ohm

File Size 60.47K  /  4 Page

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    APT8043BFLL APT8043SFLL

ADPOW[Advanced Power Technology]
Part No. APT8043BFLL APT8043SFLL
OCR Text ... DV NF A I 800 20 80 30 40 400 3.20 300 20 30 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ -55 to 150 1300 S...541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CH...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 58.43K  /  2 Page

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    APT8043BLL APT8043SLL

ADPOW[Advanced Power Technology]
Part No. APT8043BLL APT8043SLL
OCR Text ...lts Amps 800 20 80 30 40 400 3.2 -55 to 150 300 20 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Diss...541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CH...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.49K  /  2 Page

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    APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL

ADPOW[Advanced Power Technology]
Part No. APT8052BFLL APT8052SFLL APT10026JFLL APT8014JFLL
OCR Text ...s Amps 800 15 0.520 250 1000 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0...541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CH...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.43K  /  2 Page

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