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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	1PS302
OCR Text	... 25 C; note 1 - - - -65 - 4 0.5 300 +150 150 A A mW C C - - - - - 85 80 200 170 500 V V mA mA mA PARAMETER CONDITIONS MIN. MAX. UNIT 1999...380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, H...
Description	High-speed double diode
File Size	52.66K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	2N6505 2N6507 2N6509 2N6504 2N6508 2N6504/D
OCR Text	...Blocking Voltage to 800 Volts * 300 A Surge Current Capability * Device Marking: Logo, Device Type, e.g., 2N6504, Date Code MAXIMUM RATINGS...380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 ...
Description	5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路 Silicon Controlled Rectifiers
File Size	50.94K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2LC APT5010LLC
OCR Text	...7 188 30 40 520 4.16 -55 to 150 300 47 50 2500 Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor ...380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and i...
Description	Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	117.68K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2LL APT5010LLL
OCR Text	...DV NF A I 46 184 30 40 500 4.0 300 46 50 (Repetitive and Non-Repetitive) 1 4 500 Volts Watts W/C C Amps mJ -55 to 150 1800 ...380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and i...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	55.78K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
Part No.	APT5010B2VFR
OCR Text	...7 188 30 40 520 4.16 -55 to 150 300 47 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = ...380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC Gate-Source Charge Gate-...
Description	POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	64.50K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technolo...
Part No.	APT5010B2VR APT5010B2VRG
OCR Text	...7 188 30 40 520 4.16 -55 to 150 300 47 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = ...380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns nC pF Gate-Source Charge Ga...
Description	POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. New T-MAX?Package (Clip-mounted TO-247 Package)
File Size	61.66K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text	...DV NF A I 46 184 30 40 500 4.0 300 46 50 (Repetitive and Non-Repetitive) 1 4 500 Volts Watts W/C C Amps mJ -55 to 150 1800 ...380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and i...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	54.02K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JFLL
OCR Text	... A I 500 44 176 30 40 440 3.52 300 44 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1800 STATIC EL...380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and i...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.49K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	...44 176 30 40 450 3.6 -55 to 150 300 44 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 2500 STATIC ELECTRICAL CH...380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and i...
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JLL
OCR Text	... A I 500 44 176 30 40 440 3.52 300 44 50 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1800 STATIC EL...380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and i...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.35K / 2 Page	View it Online	Download Datasheet

For 300 380 Found Datasheets File :: 13402 Search Time::1.282ms
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