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For 300s Found Datasheets File :: 11468    Search Time::1.515ms    
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    ZVN4206G ZVN4206GTA

Diodes Incorporated
ZETEX[Zetex Semiconductors]
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Part No. ZVN4206G ZVN4206GTA
OCR Text ... under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 402 ZVN4206G TYPICAL CHARACTERISTICS 10 VGS= 20V 16V 14V 12V 10V ...
Description SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 45.37K  /  4 Page

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    ZVN4424A ZVN4424C

ZETEX PLC
ZETEX[Zetex Semiconductors]
Diodes Incorporated
Part No. ZVN4424A ZVN4424C
OCR Text ... pulsed conditions. Pulse width=300s. Duty cycle 2% (2)Sample Test (3) Switching times measured with 50 source impedance and >5ns rise time on pulse generator ZVN4424A/C SPICE PARAMETERS *ZVN4424 MODEL LAST REVISION 1/94 * .SUB...
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 763.33K  /  4 Page

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    ZVN4424G

Zetex Semiconductors
Part No. ZVN4424G
OCR Text ... under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 416 ...
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 43.36K  /  4 Page

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    ZVN4424Z

Diodes Incorporated
ZETEX[Zetex Semiconductors]
Part No. ZVN4424Z
OCR Text ... under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device TYPICAL CHA...
Description SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 68.80K  /  4 Page

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    ZVP2106A ZVP2106A-15

Diodes, Inc.
Diodes Incorporated
ZETEX[Zetex Semiconductors]
http://
Part No. ZVP2106A ZVP2106A-15
OCR Text ... under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. 3-417 Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ( 3 ) ZVP2106A TYPICAL CHARACTERISTICS ID(On) -On-State Drain C...
Description 280 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET TO-92 COMPATIBLE, E-LINE PACKAGE-3
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 49.17K  /  3 Page

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    ZVP2106B

SemeLAB
SEME-LAB[Seme LAB]
http://
Part No. ZVP2106B
OCR Text ...tes 1) Pulse Test: Pulse Width 300s, 2% 2) Sample 3) Switching times measured with 50 source inpedance and < 5ns rise time on a pulse generator. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab...
Description P CHANNEL ENHANCEMENT MODE DMOS FET

File Size 15.05K  /  2 Page

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    ZVP2106G

Zetex Semiconductors
Part No. ZVP2106G
OCR Text ... under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 426 ZVP2106G TYPICAL CHARACTERISTICS ID(On) -On-State Drain Current ...
Description P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 66.56K  /  3 Page

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    ZVP3306F ZVP3306

ZETEX[Zetex Semiconductors]
Part No. ZVP3306F ZVP3306
OCR Text ... under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 -434 ZVP3...
Description P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 98.02K  /  2 Page

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    ZVP3306 ZVP3306A

ZETEX[Zetex Semiconductors]
Part No. ZVP3306 ZVP3306A
OCR Text ... under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. 3-429 Switching times measured with 50 source impedance and <5ns rise time on a pulse generator ( 3 ) ZVP3306A TYPICAL CHARACTERISTICS -1.2 -1.0 VGS=-20V -16V -14V...
Description P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 75.97K  /  3 Page

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    ZVP3310F ZVP3310

ZETEX[Zetex Semiconductors]
Part No. ZVP3310F ZVP3310
OCR Text ... under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 436 ZVP3310F TYPICAL CHARACTERISTICS VGS= -20V -16V -14V -12V -10V -...
Description P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 100.93K  /  2 Page

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For 300s Found Datasheets File :: 11468    Search Time::1.515ms    
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