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Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
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| Part No. |
ASI10652 TVU150
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| OCR Text |
... 3.05 .380 / 9.65 .780 / 19.81 .435 / 11.05 1.090 / 27.69 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .082 / 2.08
.230 / 5.84
.130 / 3.30 .3...80 4.0 10 45 75 11 -52 9.0 No Degradation in Output Power 120
UNITS
V V V V mA --pF dB dBc
VC... |
| Description |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
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| File Size |
17.88K /
1 Page |
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K4S561633C-N K4S561633C-P1H K4S561633C-P1L K4S561633C-P75 K4S561633C-RBL K4S561633C-RL K4S561633C-RL75
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| OCR Text |
...CRIPTION
The K4S561633C is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated ...80 0.45 Max 1.00 0.40 0.50 0.10
Rev. 1.4 Dec. 2002
K4S561633C-R(B)L/N/P
ABSOLUTE MAXIMUM RATI... |
| Description |
From old datasheet system
IC,SDRAM,4X4MX16,CMOS,BGA,54PIN,PLASTIC
16Mx16 SDRAM 54CSP 16Mx16显示内存54CSP
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| File Size |
58.25K /
8 Page |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-XE K4S56163LF-ZC750 K4S56163LF-ZE1L0 K4S56163LF-ZN1L0
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| OCR Text |
...CRIPTION
The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated ...80 0.50 -
Max 1.20 0.40 0.55 0.10
K4S56163LF
February 2004
K4S56163LF - X(Z)E/N/G/C/L/F
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| Description |
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC 4米16 × 4银行4BOC移动SDRAM
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| File Size |
112.21K /
12 Page |
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Download Datasheet |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-RG/F90 K4S56163PF-RG/F1L K4S56163PF-RG/F75 K4S56163PF-RF750 K4S56163PF-BF900 K4S56163PF-RG750 K4S56163PF-BG750 K4S56163PF-RF900
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| OCR Text |
...CRIPTION
The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated ...80 0.50 -
Max 1.20 0.37 0.55 0.10
K4S56163PF
September 2004
K4S56163PF - R(B)G/F
ABSOLU... |
| Description |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD
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| File Size |
111.59K /
12 Page |
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it Online |
Download Datasheet |
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