|
|
 |
Mitsubishi Electric Corporation
|
Part No. |
MGFC45V5964A
|
OCR Text |
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
DESCRIPTION
The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9~6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guar... |
Description |
5.9-6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
File Size |
15.69K /
1 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Maxim
|
Part No. |
MAX2247
|
OCR Text |
...Operation, POUT < +25dBm........5:1 Continuous Power Dissipation (TA = +70C) 3 4 UCSP (derate 28.5mW/C above +70C) ..............1.3W Therm...4GHz SiGe Linear Power Amplifier
AC ELECTRICAL CHARACTERISTICS
(MAX2247 EV kit, VCC_ = +3V, fRF = ... |
Description |
2.4GHz SiGe Linear Power Amplifier From old datasheet system
|
File Size |
220.84K /
10 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Sanyo
|
Part No. |
2SC4269
|
OCR Text |
...ns
unit:mm 2018B
[2SC4269]
0.5
0.4 3
0.16
0~0.1
1.5 0.5 2.5
1
0.95 0.95 2 1.9 2.9
Specifications
Absolute Maximum Rat...4GHz VCE=10V, IC=3mA, f=0.4GHz
2 80 60 3 120 100 4 200
Ratings min typ max 0.1 1 40* 0.6 1.2 0.7... |
Description |
NPN Epitaxial Planar Silicon Transistor VHF Converter, Local Oscillator Applications NPN Epitaxial Planar Silicon Transistors
|
File Size |
106.39K /
4 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|